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| Effects of annealing treatment on the formation of CO2 in ZnO thin films grown by metal-organic chemical vapor deposition 期刊论文 applied surface science, 2010, 卷号: 256, 期号: 8, 页码: 2606-2610 作者: Wei HY ; Jia CH ; Jiao CM ; Song HP![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:156/40  |  提交时间:2010/04/04
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| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文 journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7 Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:353/16  |  提交时间:2010/08/12
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| Effect of a low-temperature thin buffer layer on the strain accommodation of In0.25Ga0.75As grown on a GaAs(001) substrate 期刊论文 semiconductor science and technology, 2003, 卷号: 18, 期号: 11, 页码: 955-959 作者: Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:73/0  |  提交时间:2010/08/12
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| Very low-pressure VLP-CVD growth of high quality gamma-Al2O3 films on silicon by multi-step process 期刊论文 journal of crystal growth, 2002, 卷号: 236, 期号: 1-3, 页码: 261-266 Tan LW; Zan YD; Wang J; Wang QY; Yu YH; Wang SR; Liu ZL; Lin LY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:83/3  |  提交时间:2010/08/12
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| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文 journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141 作者: Xu B![](/image/person.jpg)
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
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| Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文 journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375 Kong MY; Zhang JP; Wang XL; Sun DZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:99/8  |  提交时间:2010/08/12
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| Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Kong MY; Zhang JP; Wang XL; Sun DZ
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:12/0  |  提交时间:2010/11/15
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| Hydrogen-dependent lattice dilation in GaN 期刊论文 semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621 Zhang JP; Wang XL; Sun DZ; Kong MY
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:36/0  |  提交时间:2010/08/12
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| Evolution from point defects to arsenic clusters in low-temperature grown GaAs/AlGaAs multiple quantum wells 期刊论文 journal of crystal growth, 2000, 卷号: 217, 期号: 4, 页码: 355-359 Zhang MH; Han YJ; Zhang YH; Huang Q; Bao CL; Wang WX; Zhou JM; Lu LW
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:68/0  |  提交时间:2010/08/12
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| Experimental and numerical investigations on dissolution and recrystallization processes of GaSb/InSb/GaSb under microgravity and terrestrial conditions 期刊论文 journal of crystal growth, 2000, 卷号: 213, 期号: 1-2, 页码: 40-50 Hayakawa Y; Okano Y; Hirata A; Imaishi N; Kumagiri Y; Zhong X; Xie X; Yuan B; Wu F; Liu H; Yamaguchi T; Kumagawa M
![](/themes/default/image/downing1.png) 收藏  |  浏览/下载:45/0  |  提交时间:2010/08/12
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