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| Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure 期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者: Wang C
  收藏 | 浏览/下载：69/3 | 提交时间：2011/07/05
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| The synthesis of MDMO-PPV capped PbS nanorods and their application in solar cells 期刊论文
current applied physics, 2009, 卷号: 9, 期号: 5, 页码: 1175-1179
作者: Tan FR
收藏 | 浏览/下载：88/0 | 提交时间：2010/03/08
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| Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
收藏 | 浏览/下载：60/0 | 提交时间：2010/04/11
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| Morphological defects and uniformity issues of 4H-SiC homoepitaxial layers grown on off-oriented (0001)Si faces 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 275-278
Sun GS (Sun G. S.); Liu XF (Liu X. F.); Gong QC (Gong Q. C.); Wang L (Wang L.); Zhao WS (Zhao W. S.); Li JY (Li J. Y.); Zeng YP (Zeng Y. P.); Li JM (Li J. M.)
收藏 | 浏览/下载：44/0 | 提交时间：2010/04/11
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| MnSb/porous silicon hybrid structure prepared by physical vapor deposition 期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 110-114
Xiu HX; Chen NF; Peng CT
收藏 | 浏览/下载：336/6 | 提交时间：2010/08/12
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| Method for measurement of lattice parameter of cubic GaN layers on GaAs (001) 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 345-348
Zheng XH; Wang YT; Feng ZH; Yang H; Chen H; Zhou JM; Liang JW
收藏 | 浏览/下载：39/0 | 提交时间：2010/08/12
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| Fabrication of novel double-hetero-epitaxial SOT structure Si/gamma-Al2O3/Si 期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 3-4, 页码: 255-260
Tan LW; Wang QY; Wang J; Yu YH; Liu ZL; Lin LY
收藏 | 浏览/下载：51/0 | 提交时间：2010/08/12
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| Effect on the optical properties and surface morphology of cubic GaN grown by metalorganic chemical vapor deposition using isoelectronic indium surfactant doping 期刊论文
journal of crystal growth, 2002, 卷号: 235, 期号: 1-4, 页码: 207-211
作者: Zhang SM
收藏 | 浏览/下载：94/4 | 提交时间：2010/08/12
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| Investigation on the origin of crystallographic tilt in lateral epitaxial overgrown GaN using selective etching 期刊论文
journal of crystal growth, 2002, 卷号: 240, 期号: 3-4, 页码: 368-372
作者: Zhao DG
收藏 | 浏览/下载：62/0 | 提交时间：2010/08/12
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| Structural characteristic of cubic GaN nucleation layers on GaAs(001) substrates by MOCVD 期刊论文
journal of crystal growth, 2002, 卷号: 242, 期号: 1-2, 页码: 124-128
Zheng XH; Feng ZH; Wang YT; Zheng WL; Jia QJ; Jiang XM; Yang H; Liang JW
收藏 | 浏览/下载：125/0 | 提交时间：2010/08/12
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