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The transition from two-stage to three-stage evolution of wetting layer of InAs/GaAs quantum dots caused by postgrowth annealing 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 7, 页码: article no.71914
作者:  Jin P;  Ye XL;  Zhou XL
收藏  |  浏览/下载:49/4  |  提交时间:2011/07/05
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer 期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:  Ye XL;  Xu B;  Jin P
收藏  |  浏览/下载:90/0  |  提交时间:2010/04/11
Effects of the crystal structure on electrical and optical properties of pyrite FeS2 films prepared by thermally sulfurizing iron films 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 230-238
Wan DY; Wang YT; Wang BY; Ma CX; Sun H; Wei L
收藏  |  浏览/下载:34/0  |  提交时间:2010/08/12
THEORETICAL INVESTIGATION OF THE DYNAMIC PROCESS OF THE ILLUMINATION OF GAAS 期刊论文
physical review b, 1994, 卷号: 50, 期号: 8, 页码: 5189-5195
REN GB; WANG ZG; XU B; BING Z
收藏  |  浏览/下载:18/0  |  提交时间:2010/11/15
INVESTIGATION OF POROUS SILICON BY SCANNING-TUNNELING-MICROSCOPY AND ATOMIC-FORCE MICROSCOPY 期刊论文
journal of vacuum science & technology b, 1994, 卷号: 12, 期号: 4, 页码: 2437-2439
YU T; LAIHO R; HEIKKILA L
收藏  |  浏览/下载:19/0  |  提交时间:2010/11/15


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