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CORC

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Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Cluster scattering in two-dimensional electron gas investigated by Born approximation and partial-wave methods 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 543-546
Li ZW; Xu XQ; Wang J; Liu JM; Liu XL; Yang SY; Zhu QS; Wang ZG
收藏  |  浏览/下载：67/8  |  提交时间：2011/07/05
IN-PLANE OPTICAL ANISOTROPY OF STRAINED WURTZITE GaN IN THE A- AND R-PLANES 期刊论文
international journal of modern physics b, 2010, 卷号: 24, 期号: 27, 页码: 5439-5450
作者:  Hao GD
收藏  |  浏览/下载：49/5  |  提交时间：2011/07/05
Room-temperature observation of electron resonant tunneling through InAs/AlAs quantum dots 期刊论文
electrochemical and solid state letters, 2006, 卷号: 9, 期号: 5, 页码: g167-g170
作者:  Ye XL;  Xu B
收藏  |  浏览/下载：77/0  |  提交时间：2010/04/11
QE and Suns-V-oc study on the epitaxial CSiTF solar cells 期刊论文
science in china series e-engineering & materials science, 2005, 卷号: 48, 期号: 1, 页码: 41-52
Bin A; Shen H; Ban Q; Liang ZC; Chen RL; Shi ZR; Liao XB
收藏  |  浏览/下载：28/0  |  提交时间：2010/03/17
Effects of the sulfur pressure on pyrite FeS2 films prepared by sulfurizing thermally iron films 期刊论文
journal of crystal growth, 2003, 卷号: 257, 期号: 3-4, 页码: 286-292
Wan DY; Wang BY; Wang YT; Sun H; Zhang RG; Wei L
收藏  |  浏览/下载：327/6  |  提交时间：2010/08/12
Photoluminesfcence of Er-doped SiO2 films containing Si nanocrystals and Er 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 10-15
Chen CY; Chen WD; Song SF; Hsu CC
收藏  |  浏览/下载：441/2  |  提交时间：2010/08/12
Electrical Transport Properties of Annealed Undoped InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 1-5
Zhao Youwen; Luo Yilin; Sun Niefeng; S Fung; Beling C D; Sun Tongnian; Lin Lanyin
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 766-769
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：97/14  |  提交时间：2010/08/12
Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Gao F; Lin YX; Huang DD; Li JP; Sun DZ; Kong MY; Zeng YP; Li JM; Lin LY
收藏  |  浏览/下载：8/0  |  提交时间：2010/11/15

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