Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

CORC > 半导体研究所 > 中国科学院半导体研究所 > 中国科学院半导体研究所（2009年前）

	Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability
	Gao F ; Lin YX ; Huang DD ; Li JP ; Sun DZ ; Kong MY ; Zeng YP ; Li JM ; Lin LY
刊名	journal of crystal growth
	2001
卷号	227 期号:0 页码:766-769
关键词	annealing molecular beam epitaxy germanium silicon alloys semiconducting materials STRAIN RELAXATION
ISSN号	0022-0248
通讯作者	gao f,chinese acad sci,ctr mat sci,inst semicond,beijing 10083,peoples r china.
中文摘要	the effects of annealing time and si cap layer thickness: on the thermal stability of the si/sige/si heterostructures deposited by disilane and solid-ge molecule beam epitaxy were investigated. it is found that in the same strain state of the sige layers the annealing time decreases with increasing si cap layer thickness. this effect is analyzed by a force-balance theory and an equation has been obtained to characterize the relation between the annealing time and the si cap layer thickness. (c) 2001 elsevier science b.v. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-08-12
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/12180]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Gao F,Lin YX,Huang DD,et al. Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability[J]. journal of crystal growth,2001,227(0):766-769.
APA	Gao F.,Lin YX.,Huang DD.,Li JP.,Sun DZ.,...&Lin LY.(2001).Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability.journal of crystal growth,227(0),766-769.
MLA	Gao F,et al."Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability".journal of crystal growth 227.0(2001):766-769.