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科研机构
半导体研究所 [21]
内容类型
期刊论文 [17]
会议论文 [4]
发表日期
2011 [1]
2010 [2]
2008 [2]
2006 [1]
2005 [1]
2004 [1]
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半导体材料 [21]
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Improvement of amorphous silicon n-i-p solar cells by incorporating double-layer hydrogenated nanocrystalline silicon structure
期刊论文
journal of non-crystalline solids, 2011, 卷号: 357, 期号: 1, 页码: 121-125
作者:
Wang C
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浏览/下载:69/3
  |  
提交时间:2011/07/05
Hydrogenated nanocrystalline silicon
Buffer layer
i/p interface
Solar cells
OPEN-CIRCUIT VOLTAGE
A-SI-H
P/I-INTERFACE
MICROCRYSTALLINE SILICON
VAPOR-DEPOSITION
FILMS
CAPACITANCE
EFFICIENCY
CRYSTALLINE
TEMPERATURE
Delay of the excited state lasing of 1310 nm InAs/GaAs quantum dot lasers by facet coating
期刊论文
applied physics letters, 2010, 卷号: 96, 期号: 17, 页码: art. no. 171101
Cao YL (Cao Yu-Lian)
;
Yang T (Yang Tao)
;
Xu PF (Xu Peng-Fei)
;
Ji HM (Ji Hai-Ming)
;
Gu YX (Gu Yong-Xian)
;
Wang XD (Wang Xiao-Dong)
;
Wang Q (Wang Qing)
;
Ma WQ (Ma Wen-Quan)
;
Chen LH (Chen Liang-Hui)
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  |  
浏览/下载:221/51
  |  
提交时间:2010/05/24
excited states
gallium arsenide
III-V semiconductors
indium compounds
laser tuning
optical films
quantum dot lasers
silicon compounds
tantalum compounds
TEMPERATURE-DEPENDENCE
THRESHOLD
PERFORMANCE
GAIN
Effects of silicon incorporation on composition, structure and electric conductivity of cubic boron nitride thin films
期刊论文
diamond and related materials, 2010, 卷号: 19, 期号: 11, 页码: 1371-1376
Ying J (Ying J.)
;
Zhang XW (Zhang X. W.)
;
Fan YM (Fan Y. M.)
;
Tan HR (Tan H. R.)
;
Yin ZG (Yin Z. G.)
收藏
  |  
浏览/下载:27/0
  |  
提交时间:2010/12/28
Cubic boron nitride
Doping
Ion beam assisted deposition
X-ray photoelectron spectroscopy
RAY PHOTOELECTRON-SPECTROSCOPY
VAPOR-DEPOSITION
SI
NUCLEATION
GROWTH
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
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  |  
浏览/下载:65/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
期刊论文
journal of non-crystalline solids, 2008, 卷号: 354, 期号: 19-25, 页码: 2282-2285
Kazanskii, AG
;
Kong, GL
;
Zeng, XB
;
Hao, HY
;
Liu, FZ
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  |  
浏览/下载:104/29
  |  
提交时间:2010/03/08
silicon
conductivity
chemical vapor deposition
microcrystallinity
absorption
photoconductivity
Synthesis and photoluminescence properties of vertically aligned ZnO nanorod-nanowall junction arrays on a ZnO-coated silicon substrate
期刊论文
nanotechnology, 2006, 卷号: 17, 期号: 15, 页码: 3740-3744
Li C (Li Chun)
;
Fang GJ (Fang Guojia)
;
Su FH (Su Fuhai)
;
Li GH (Li Guohua)
;
Wu XG (Wu Xiaoguang)
;
Zhao XZ (Zhao Xingzhong)
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  |  
浏览/下载:35/0
  |  
提交时间:2010/04/11
TEMPERATURE-DEPENDENT PHOTOLUMINESCENCE
OPTICAL-PROPERTIES
ZINC-OXIDE
THIN-FILMS
VAPOR-DEPOSITION
SI SUBSTRATE
NANOWIRES
GROWTH
EMISSION
EPITAXY
Silica and alumina thin films grown by liquid phase deposition
期刊论文
pricm 5: the fifth pacific rim international conference on advanced materials and processing, 2005, 卷号: pts 1-5, 期号: 475-479, 页码: 1725-1728
Sun, J
;
Hu, LZ
;
Wang, ZY
;
Du, GT
收藏
  |  
浏览/下载:25/0
  |  
提交时间:2010/03/17
silica
alumina
liquid phase deposition
semiconductors
ELECTRICAL CHARACTERISTICS
DIOXIDE FILMS
OXIDE-FILMS
A V-shaped module technique for promoting generation photocurrent density of silicon solar cells
会议论文
5th international conference on thin film physics and applications, shanghai, peoples r china, may 31-jun 02, 2004
Li, JM
;
Chong, M
;
Duan, XF
;
Xu, JD
;
Gao, M
;
Wang, FL
收藏
  |  
浏览/下载:160/34
  |  
提交时间:2010/03/29
silicon
solar cells
V-shaped structure
Influence of high-temperature AIN buffer thickness on the properties of GaN grown on Si(111)
期刊论文
journal of crystal growth, 2003, 卷号: 258, 期号: 1-2, 页码: 34-40
作者:
Zhao DG
收藏
  |  
浏览/下载:299/12
  |  
提交时间:2010/08/12
metalorganic chemical vapor deposition
nitrides
semiconductor III-V materials
MOLECULAR-BEAM EPITAXY
HIGH-QUALITY GAN
CHEMICAL-VAPOR-DEPOSITION
INTERMEDIATE LAYER
ALAS
ALN
SURFACES
SILICON
FILMS
The growth morphologies of GaN layer on Si(111) substrate
期刊论文
journal of crystal growth, 2003, 卷号: 247, 期号: 1-2, 页码: 91-98
Lu YA
;
Liu XL
;
Lu DC
;
Yuan HR
;
Hu GQ
;
Wang XH
;
Wang ZG
;
Duan XF
收藏
  |  
浏览/下载:21/0
  |  
提交时间:2010/08/12
Si(111) substrate
heteroepitaxy
metalorganic chemical vapor deposition
GaN
LIGHT-EMITTING-DIODES
CHEMICAL-VAPOR-DEPOSITION
NUCLEATION LAYERS
BUFFER LAYER
SILICON
SAPPHIRE
NITRIDE
EPITAXY
STRESS
STRAIN
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