Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure

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	Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure
	Kazanskii, AG ; Kong, GL ; Zeng, XB ; Hao, HY ; Liu, FZ
刊名	journal of non-crystalline solids
	2008
卷号	354 期号:19-25 页码:2282-2285
关键词	silicon conductivity chemical vapor deposition microcrystallinity absorption photoconductivity
ISSN号	0022-3093
通讯作者	kazanskii, ag, moscow mv lomonosov state univ, dept phys, moscow 119991, russia. 电子邮箱地址: kazanski@phys.msu.ru
中文摘要	the results of conductivity, photoconductivity and constant photocurrent method absorption measurements by dc and ac methods in hydrogenated silicon films with mixed amorphous-nanocrystalline structure are presented. a series of diphasic silicon films was deposited by very high frequency plasma enhanced chemical vapor deposition technique, using different hydrogen dilution ratios of silane. the increase of hydrogen dilution ratio results in five orders of magnitude increase of conductivity and a sharp increase of grain volume fraction. the comparison of the absorption spectra obtained by dc and ac methods showed that they are similar for silicon films with the predominantly amorphous structure and films with high grain volume fraction. however we found a dramatic discrepancy between the absorption spectra obtained by dc and ac constant photocurrent methods in silicon films deposited in the regime of the structure transition from amorphous to nanocrystalline state. ac constant photocurrent method gives higher absorption coefficient than dc constant photocurrent method in the photon energy range of 1.2-1.7 ev. this result indicates the possibility of crystalline grains contribution to absorption spectra measured by ac constant photocurrent method in silicon films with intermediate crystalline grain volume fraction. (c) 2008 published by elsevier b.v.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6642]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Kazanskii, AG,Kong, GL,Zeng, XB,et al. Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure[J]. journal of non-crystalline solids,2008,354(19-25):2282-2285.
APA	Kazanskii, AG,Kong, GL,Zeng, XB,Hao, HY,&Liu, FZ.(2008).Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure.journal of non-crystalline solids,354(19-25),2282-2285.
MLA	Kazanskii, AG,et al."Peculiarity of constant photocurrent method for silicon films with mixed amorphous-nanocrystalline structure".journal of non-crystalline solids 354.19-25(2008):2282-2285.