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VLS growth of SiOx nanowires with a stepwise nonuniformity in diameter 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84328
Huang SL; Wu Y; Zhu XF; Li LX; Wang ZG; Wang LZ; Lu GQ
收藏  |  浏览/下载：29/0  |  提交时间：2011/07/05
Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B; Li ZC; Yao R; Liang M; Yan FW; Wang GH
收藏  |  浏览/下载：93/5  |  提交时间：2011/07/05
Stress and resistivity controls on in situ boron doped LPCVD polysilicon films for high-Q MEMS applications 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 8, 页码: 34-38
Xie Jing; Liu Yunfei; Yang Jinling; Tang Longjuan; Yang Fuhua
收藏  |  浏览/下载：22/0  |  提交时间：2010/11/23
Improvement in crystal quality of ZnO film on Si substrate by using a homo-buffer layer 期刊论文
materials science in semiconductor processing, 2009, 卷号: 12, 期号: 6, 页码: 233-237
作者:  Zhao J
收藏  |  浏览/下载：46/4  |  提交时间：2011/07/05
Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
收藏  |  浏览/下载：20/0  |  提交时间：2010/04/11
High-quality multiple quantum wells selectively grown with tapered masks by ultra-low-pressure MOCVD 期刊论文
optical materials, 2006, 卷号: 28, 期号: 8-9, 页码: 1037-1040
作者:  Pan JQ
收藏  |  浏览/下载：62/0  |  提交时间：2010/04/11
A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 8, 页码: 2016-2019
作者:  Wang Wei;  Pan Jiaoqing;  Wang Wei
收藏  |  浏览/下载：17/0  |  提交时间：2010/11/23
Effects and numerical analysis of argon gas flow on the oxygen concentration in Czochralski silicon single crystal growth 会议论文
iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002
Zhang ZC; Ren BY; Chen YH; Yang SY; Wang ZG
收藏  |  浏览/下载：27/0  |  提交时间：2010/11/15
Effects of reactor pressure on GaN nucleation layers and subsequent GaN epilayers grown on sapphire substrate 期刊论文
journal of crystal growth, 2003, 卷号: 254, 期号: 3-4, 页码: 348-352
作者:  Zhang SM
收藏  |  浏览/下载：230/30  |  提交时间：2010/08/12
Large excitation-power dependence of pressure coefficients of InxGa1-xN/InyGa1-yN quantum wells 会议论文
10th international conference on high pressures in semiconductor physics (hpsp-x), guildford, england, aug 05-08, 2002
Li Q; Fang ZL; Xu SJ; Li GH; Xie MH; Tong SY; Zhang XH; Liu W; Chua SJ
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/15

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