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| Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
  收藏 | 浏览/下载：53/10 | 提交时间：2011/07/05
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| Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin- SiO2/Si p-channel metal-oxide-semiconductor stacks 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 13, 页码: art. no. 132908
Zheng XH (Zheng X. H.); Huang AP (Huang A. P.); Xiao ZS (Xiao Z. S.); Yang ZC (Yang Z. C.); Wang M (Wang M.); Zhang XW (Zhang X. W.); Wang WW (Wang W. W.); Chu PK (Chu Paul K.)
收藏 | 浏览/下载：10/0 | 提交时间：2010/11/14
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| Blue Luminescent Properties of Silicon Nanowires Grown by a Solid-Liquid-Solid Method 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057305
Peng YC (Peng Ying-Cai); Fan ZD (Fan Zhi-Dong); Bai ZH (Bai Zhen-Hua); Zhao XW (Zhao Xin-Wei); Lou JZ (Lou Jian-Zhong); Cheng X (Cheng Xu)
收藏 | 浏览/下载：159/35 | 提交时间：2010/05/24
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| Annealing study of carrier concentration in gradient-doped GaAs/GaAlAs epilayers grown by molecular beam epitaxy 期刊论文
applied optics, 2009, 卷号: 48, 期号: 9, 页码: 1715-1720
Zhang YJ; Chang BK; Yang Z; Niu J; Xiong YJ; Shi F; Guo H; Zeng YP
收藏 | 浏览/下载：69/25 | 提交时间：2010/03/08
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| Porous InP array-directed assembly of InAs nanostructure 期刊论文
applied physics letters, 2006, 卷号: 88, 期号: 26, 页码: art.no.263107
作者: Li L
收藏 | 浏览/下载：52/0 | 提交时间：2010/04/11
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| Optical investigation on the annealing effect and its mechanism of GaInAs/GaNAs quantum wells 期刊论文
journal of crystal growth, 2003, 卷号: 253, 期号: 1-4, 页码: 155-160
作者: Jiang DS
收藏 | 浏览/下载：56/0 | 提交时间：2010/08/12
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| Influence of semi-insulating InP substrates on InAlAs epilayers grown by molecular beam epitaxy 期刊论文
journal of crystal growth, 2003, 卷号: 250, 期号: 3-4, 页码: 364-369
Dong HW; Zhao YW; Zeng YP; Jiao JH; Li JM; Lin LY
收藏 | 浏览/下载：45/0 | 提交时间：2010/08/12
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| Microdefects and electrical uniformity of InP annealed in phosphorus and iron phosphide ambiances 期刊论文
journal of crystal growth, 2003, 卷号: 259, 期号: 1-2, 页码: 1-7
Dong ZY; Zhao YW; Zeng YP; Duan ML; Sun WR; Jiao JH; Lin LY
收藏 | 浏览/下载：353/16 | 提交时间：2010/08/12
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| Influence of strain on annealing effects of In(Ga)As quantum dots 期刊论文
journal of crystal growth, 2002, 卷号: 244, 期号: 2, 页码: 136-141
作者: Xu B
收藏 | 浏览/下载：45/0 | 提交时间：2010/08/12
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| Carbonization process of Si(100) by ion-beam bombardment 期刊论文
journal of crystal growth, 2001, 卷号: 233, 期号: 3, 页码: 446-450
Liao MY; Chai CL; Yao ZY; Yang SY; Liu ZK; Wang ZG
收藏 | 浏览/下载：84/8 | 提交时间：2010/08/12
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