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Evidence of Type-II Band Alignment in III-nitride Semiconductors: Experimental and theoretical investigation for In0.17Al0.83N/GaN heterostructures 期刊论文
scientific reports, 2014, 卷号: 4, 页码: 6521
Wang, JM; Xu, FJ; Zhang, X; An, W; Li, XZ; Song, J; Ge, WK; Tian, GS; Lu, J; Wang, XQ; Tang, N; Yang, ZJ; Li, W; Wang, WY; Jin, P; Chen, YH; Shen, B
收藏  |  浏览/下载:21/0  |  提交时间:2015/03/20
Influence of electric field on persistent photoconductivity in unintentionally doped n-type GaN 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.102104
作者:  Deng QW
收藏  |  浏览/下载:47/5  |  提交时间:2011/07/05
Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN 期刊论文
chinese physics letters, 2011, 卷号: 28, 期号: 3, 页码: article no.37102
Hou QF; Wang XL; Xiao HL; Wang CM; Yang CB; Yin HB; Li JM; Wang ZG
收藏  |  浏览/下载:42/4  |  提交时间:2011/07/05
Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: article no.50
作者:  Wei HY;  Song HP;  Zhang B
收藏  |  浏览/下载:64/2  |  提交时间:2011/07/05
Variation of Optical Quenching of Photoconductivity with Resistivity in Unintentional Doped GaN 期刊论文
chinese physics letters, 2010, 卷号: 27, 期号: 5, 页码: art. no. 057104
Hou QF (Hou Qi-Feng); Wang XL (Wang Xiao-Liang); Xiao; HL (Xiao Hong-Ling); Wang CM (Wang Cui-Mei); Yang CB (Yang Cui-Bai); Li JM (Li Jin-Min)
收藏  |  浏览/下载:255/64  |  提交时间:2010/05/24
The field emission properties of nonpolar a-plane n-type GaN films grown on nano-patterned sapphire substrates 期刊论文
physica status solidi a-applications and materials science, 2009, 卷号: 206, 期号: 7, 页码: 1501-1503
Sun LL; Yan FW; Wang JX; Zhang HX; Zeng YP; Wang GH; Li JM
收藏  |  浏览/下载:55/1  |  提交时间:2010/03/08
Band-gap bowing and p-type doping of (Zn, Mg, Be)O wide-gap semiconductor alloys: a first-principles study 期刊论文
european physical journal b, 2008, 卷号: 66, 期号: 4, 页码: 439-444
Shi HL; Duan Y
收藏  |  浏览/下载:151/26  |  提交时间:2010/03/08
Cathodoluminescence and Raman research of V-shape inverted pyramid in HVPE grown GaN film 期刊论文
materials letters, 2007, 卷号: 61, 期号: 18, 页码: 3882-3885
作者:  Wei TB;  Duan RF
收藏  |  浏览/下载:20/0  |  提交时间:2010/03/29
GaN  
Using different carrier gases to control AlN film stress and the effect on morphology, structural properties and optical properties 期刊论文
journal of physics d-applied physics, 2007, 卷号: 40, 期号: 23, 页码: 7462-7466
Hu, WG; Liu, XL; Jiao, CM; Wei, HY; Kang, TT; Zhang, PF; Zhang, RQ; Fan, HB; Zhu, QS
收藏  |  浏览/下载:56/4  |  提交时间:2010/03/08
Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏  |  浏览/下载:49/0  |  提交时间:2010/04/11


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