Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy

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	Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy
	Wei HY; Song HP; Zhang B
刊名	nanoscale research letters
	2011
卷号	6 页码:article no.50
关键词	CHEMICAL-VAPOR-DEPOSITION CORE-LEVEL PHOTOEMISSION SB-DOPED SNO2 INN GROWTH GAN NAXWO3 ALLOYS GREEN STATE
ISSN号	1931-7573
通讯作者	shi, k, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. shikai@semi.ac.cn ; lidb@ciomp.ac.cn ; xlliu@semi.ac.cn
学科主题	半导体材料
收录类别	SCI
资助信息	863 high technology r&d program of china [2007aa03z402, 2007aa03z451]; special funds for major state basic research project (973 program) of china [2006cb604907]; national science foundation of china [60506002, 60776015]
语种	英语
公开日期	2011-07-05 ; 2011-07-15
附注	diamond is not only a free standing highly transparent window but also a promising carrier confinement layer for inn based devices, yet little is known of the band offsets in inn/diamond system. x-ray photoelectron spectroscopy was used to measure the energy discontinuity in the valence band offset (vbo) of inn/diamond heterostructure. the value of vbo was determined to be 0.39 +/- 0.08 ev and a type-i heterojunction with a conduction band offset (cbo) of 4.42 +/- 0.08 ev was obtained. the accurate determination of vbo and cbo is important for the application of iii-n alloys based electronic devices.
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/21263]
专题	半导体研究所_中科院半导体材料科学重点实验室
推荐引用方式 GB/T 7714	Wei HY,Song HP,Zhang B. Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy[J]. nanoscale research letters,2011,6:article no.50.
APA	Wei HY,Song HP,&Zhang B.(2011).Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy.nanoscale research letters,6,article no.50.
MLA	Wei HY,et al."Determination of InN/Diamond Heterojunction Band Offset by X-ray Photoelectron Spectroscopy".nanoscale research letters 6(2011):article no.50.