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Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in AlGaN/GaN heterostructures 期刊论文
journal of applied physics, 2014, 卷号: 115, 期号: 4, 页码: 043702
Jin, DD; Wang, LS; Yang, SY; Zhang, LW; Li, HJ; Zhang, H; Wang, JX; Xiang, RF; Wei, HY; Jiao, CM; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:15/0  |  提交时间:2015/03/20
Evaluating the effect of dislocation on the photovoltaic performance of metamorphic tandem solar cells 期刊论文
science china-technological sciences, 2010, 卷号: 53, 期号: 9, 页码: 2569-2574
Zhang H (Zhang Han); Chen NF (Chen NuoFu); Wang Y (Wang Yu); Zhang XW (Zhang XingWang); Yin ZG (Yin ZhiGang); Shi HW (Shi HuiWei); Wang YS (Wang YanSuo); Huang TM (Huang TianMao); Bai YM (Bai YiMing); Fu Z (Fu Zhen)
收藏  |  浏览/下载:250/25  |  提交时间:2010/09/07
Influence of dislocation stress field on distribution of quantum dots 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 33, 期号: 1, 页码: 130-133
作者:  Xu B
收藏  |  浏览/下载:55/0  |  提交时间:2010/04/11
Effect of misfit dislocation originated from strained layer on photoluminescence properties of InxGa1-xN/GaN multiple quantum wells 期刊论文
chinese physics letters, 2005, 卷号: 22, 期号: 4, 页码: 971-974
作者:  Li DB
收藏  |  浏览/下载:25/0  |  提交时间:2010/03/17
Defects and morphologies in In0.8Ga0.2As/InAlAs/InP(001) for high electron-mobility transistors 期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 147-152
Wu J; Lin F
收藏  |  浏览/下载:53/0  |  提交时间:2010/08/12
Dislocations in InAs epilayers grown by MBE on GaAs substrates under various conditions 会议论文
symposium on electron microscopy of semiconducting materials and ulsi devices at the spring materials-research-society meeting, san francisco, ca, apr 15-16, 1998
Wang HM; Zeng YP; Pan L; Zhou HW; Zhu ZP; Kong MY
收藏  |  浏览/下载:17/0  |  提交时间:2010/10/29
Growth of high-quality relaxed In0.3Ga0.7As/GaAs superlattices 期刊论文
journal of crystal growth, 1997, 卷号: 181, 期号: 3, 页码: 297-300
Pan D; Zeng YP; Wu J; Kong MY
收藏  |  浏览/下载:8/0  |  提交时间:2010/11/17
BREAKING UP OF MISFIT DISLOCATIONS IN GAASIN0.3GA0.7AS/GAAS HETEROSTRUCTURE 期刊论文
applied physics letters, 1995, 卷号: 67, 期号: 6, 页码: 846-847
WU J; LI W; FAN TW; WANG ZG; DUAN XF
收藏  |  浏览/下载:11/0  |  提交时间:2010/11/17


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