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科研机构
半导体研究所 [8]
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期刊论文 [8]
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2006 [2]
2003 [1]
2001 [1]
2000 [2]
1998 [1]
1991 [1]
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半导体材料 [8]
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High quality microcrystalline Si films by hydrogen dilution profile
期刊论文
thin solid films, 2006, 卷号: 515, 期号: 2, 页码: 452-455
Gu JH (Gu Jinhua)
;
Zhu MF (Zhu Meifang)
;
Wang LJ (Wang Liujiu)
;
Liu FZ (Liu Fengzhen)
;
Zhou BQ (Zhou Bingqing)
;
Ding K (Ding Kun)
;
Li GH (Li Guohua)
收藏
  |  
浏览/下载:38/0
  |  
提交时间:2010/04/11
microcrystalline Si thin film
hydrogen dilution profiling
incubation layer
uniformity
CHEMICAL-VAPOR-DEPOSITION
THIN
ALLOYS
CVD
Electron resonant tunneling through InAs/GaAs quantum dots embedded in a Schottky diode with an AlAs insertion layer
期刊论文
journal of the electrochemical society, 2006, 卷号: 153, 期号: 7, 页码: g703-g706
作者:
Ye XL
;
Xu B
;
Jin P
收藏
  |  
浏览/下载:90/0
  |  
提交时间:2010/04/11
GAAS
SPECTROSCOPY
PARAMETERS
TRANSPORT
LASERS
ENERGY
STATES
HOLE
Structural and photoluminescent properties of ternary Zn1-xCdxO crystal films grown on Si(111) substrates
期刊论文
journal of crystal growth, 2003, 卷号: 256, 期号: 1-2, 页码: 78-82
Ye ZZ
;
Ma DW
;
He JH
;
Huang JY
;
Zhao BH
;
Luo XD
;
Xu ZY
收藏
  |  
浏览/下载:487/1
  |  
提交时间:2010/08/12
characterization
crystal structure
DC sputtering
alloys
zinc compounds
semiconducting II-VI materials
THIN-FILMS
ROOM-TEMPERATURE
ULTRAVIOLET-LASER
SPRAY-PYROLYSIS
ZNO
MGXZN1-XO
EMISSION
ALLOY
Structural characterization of cubic GaN grown on GaAs(001) substrates
期刊论文
chinese journal of electronics, 2001, 卷号: 10, 期号: 2, 页码: 219-222
Zheng XH
;
Qu B
;
Wang YT
;
Yang H
;
Liang JW
;
Han JY
收藏
  |  
浏览/下载:93/4
  |  
提交时间:2010/08/12
cubic GaN
X-ray double crystal diffraction
structural characteristics
CONTINUOUS-WAVE OPERATION
EPITAXIAL-GROWTH
HEXAGONAL GAN
LASER-DIODES
THIN-FILMS
MBE
X-ray double-crystal characterization of the strain relaxation in GaAs/GaNxAs1-x/GaAs(001) sandwiched structures
期刊论文
journal of crystal growth, 2000, 卷号: 217, 期号: 1-2, 页码: 26-32
Pan Z
;
Wang YT
;
Li LH
;
Zhang W
;
Lin YW
;
Zhou ZQ
;
Wu RH
收藏
  |  
浏览/下载:48/0
  |  
提交时间:2010/08/12
x-ray diffraction
strain relaxation
GaNxAs1-x/GaAs
photoluminescence
RHEED
MOLECULAR-BEAM EPITAXY
TEMPERATURE PULSED OPERATION
BAND-GAP ENERGY
NITROGEN
GAASN
GANXAS1-X
GAAS1-XNX
ALLOYS
LASERS
LAYERS
Point defects in III-V compound semiconductors
期刊论文
defects and diffusion in semiconductors, 2000, 卷号: 183-1, 期号: 0, 页码: 85-93
Chen N
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  |  
浏览/下载:44/0
  |  
提交时间:2010/08/12
compound semiconductors
point defects
deep level centres
stoichiometry
MOLECULAR-BEAM EPITAXY
GAAS SINGLE-CRYSTALS
SEMIINSULATING GALLIUM-ARSENIDE
SEMI-INSULATING GAAS
ELECTRICAL-PROPERTIES
LATTICE-PARAMETER
NATIVE DEFECTS
CARBON
DIFFRACTOMETER
STOICHIOMETRY
Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(001) substrate measured by a series of symmetric double crystal X-ray diffraction
期刊论文
journal of crystal growth, 1998, 卷号: 191, 期号: 4, 页码: 627-630
Wang HM
;
Zeng YP
;
Zhou HW
;
Kong MY
收藏
  |  
浏览/下载:52/0
  |  
提交时间:2010/08/12
MOLECULAR-BEAM EPITAXY
HALL ELEMENTS
GAAS
MISORIENTATION
DISTORTION
LAYERS
MBE
SI
HETEROSTRUCTURES
GROWTH
INVESTIGATION OF GAAS/SI MATERIAL BY X-RAY DOUBLE-CRYSTAL DIFFRACTION
期刊论文
journal of applied physics, 1991, 卷号: 70, 期号: 8, 页码: 4172-4175
LI CR
;
MAI ZH
;
CUI SF
;
ZHOU JM
;
WANG YT
收藏
  |  
浏览/下载:17/0
  |  
提交时间:2010/11/15
CHEMICAL VAPOR-DEPOSITION
SOLAR-CELL APPLICATIONS
MOLECULAR-BEAM EPITAXY
SI
HETEROSTRUCTURES
SUPERLATTICES
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