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Effect of different metal composite layer on field emission properties of diamond film 期刊论文
advanced materials research, 2012, 卷号: 586, 页码: 181-184
Zhang, XinYue; Ma, HuaLi; Zhao, YongMei; Yao, Ning; Zeng, FanGuang
收藏  |  浏览/下载：9/0  |  提交时间：2013/05/07
Comparative studies on field emission properties of diamond and diamond /Ti films 期刊论文
advanced materials research, 2012, 卷号: 586, 页码: 177-180
Zhang, XinYue; Ma, HuaLi; Zhao, YongMei; Yao, Ning; Zeng, FanGuang; Zhang, BingLin
收藏  |  浏览/下载：9/0  |  提交时间：2013/05/07
Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文
nanoscale research letters, 2011, 卷号: 6, 页码: 463
Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG
收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06
Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311
作者:  Xu B;  Zhou GY;  Ye XL;  Zhang HY
收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05
The effect of different oriented sapphire substrates on the growth of polar and non-polar ZnMgO by MOCVD 期刊论文
journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 39-42
作者:  Song HP;  Shi K;  Sang L;  Wei HY
收藏  |  浏览/下载：58/3  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Electrical transport properties of the Si-doped cubic boron nitride thin films prepared by in situ cosputtering 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 2, 页码: article no.23716
作者:  Yin ZG;  Zhang XW;  Tan HR;  Fan YM;  Zhang SG
收藏  |  浏览/下载：42/3  |  提交时间：2011/07/05
Defect properties of as-grown and electron-irradiated Te-doped GaSb studied by positron annihilation 期刊论文
semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75016
Li H; Zhou K; Pang JB; Shao YD; Wang Z; Zhao YW
收藏  |  浏览/下载：52/10  |  提交时间：2011/07/05
Optical properties of InAsSb nanostructures embedded in InGaAsSb strain reducing layer 期刊论文
physica e-low-dimensional systems & nanostructures, 2011, 卷号: 43, 期号: 4, 页码: 869-873
作者:  Zhou XL;  Li TF
收藏  |  浏览/下载：31/1  |  提交时间：2011/07/05
Broadband tunable external cavity laser using a bent-waveguide quantum-dot superluminescent diode as gain device 期刊论文
chinese physics b, 2011, 卷号: 20, 期号: 6, 页码: art. no. 064202
作者:  Jin P
收藏  |  浏览/下载：43/4  |  提交时间：2011/07/15

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