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MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文
journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117
作者:  Jia CH;  Song HP
收藏  |  浏览/下载：118/2  |  提交时间：2011/07/05
Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文
nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603
作者:  Song HP
收藏  |  浏览/下载：69/3  |  提交时间：2011/07/05
Infrared transition properties of vanadium dioxide thin films across semiconductor-metal transition 期刊论文
rare metals, 2011, 卷号: 30, 期号: 3, 页码: 247-251
作者:  Li GK
收藏  |  浏览/下载：74/2  |  提交时间：2011/07/05
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Gao FB (Gao Fubao); Chen NF (Chen NuoFu); Liu L (Liu Lei); Zhang XW (Zhang X. W.); Wu JL (Wu Jinliang); Yin ZG (Yin Zhigang)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
Characterization of free-standing GaN substrate grown through hydride vapor phase epitaxy with a TiN interlayer 期刊论文
applied surface science, 2007, 卷号: 253, 期号: 18, 页码: 7423-7428
作者:  Duan RF;  Wei TB
收藏  |  浏览/下载：29/0  |  提交时间：2010/03/29
GaN  
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering 期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:  Yin ZG
收藏  |  浏览/下载：54/0  |  提交时间：2010/04/11
ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文
applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845
Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun)
收藏  |  浏览/下载：24/0  |  提交时间：2010/04/11
Hydrogenated p-type nanocrystalline silicon in amorphous silicon solar cells 期刊论文
journal of non-crystalline solids, 2006, 卷号: 352, 期号: 9-20, 页码: 1900-1903
Hu ZH (Hu Zhihua); Liao XB (Liao Xianbo); Diao HW (Diao Hongwei); Cai Y (Cai Yi); Zhang SB (Zhang Shibin); Fortunato E (Fortunato Elvira); Martins R (Martins Rodrigo)
收藏  |  浏览/下载：59/0  |  提交时间：2010/04/11
Magnetron sputtering growth of InAs0.3Sb0.7 films on (100) GaAs substrates: Strong effect of growth conditions on film structure 期刊论文
journal of crystal growth, 2005, 卷号: 285, 期号: 4, 页码: 459-465
作者:  Yin ZG
收藏  |  浏览/下载：304/5  |  提交时间：2010/04/11
Comparison of the properties of GaN grown on complex Si-based structures 期刊论文
applied physics letters, 2005, 卷号: 86, 期号: 8, 页码: art.no.081912
Zhou, SQ; Vantomme, A; Zhang, BS; Yang, H; Wu, MF
收藏  |  浏览/下载：30/0  |  提交时间：2010/03/17

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