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Enhancement of Exciton-Phonon Interaction in InGaN Quantum Wells Induced by Electron-Beam Irradiation 期刊论文
japanese journal of applied physics, 2009, 卷号: 48, 期号: 2, 页码: art. no. 021001
作者:  Wei XC;  Duan RF;  Ding K
收藏  |  浏览/下载：80/19  |  提交时间：2010/03/08
Magnetic coupling properties of mn-doped ZnO nanowires: First-principles calculations 期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 7, 页码: art. no. 073903
Shi, H; Duan, Y
收藏  |  浏览/下载：45/2  |  提交时间：2010/03/08
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs 期刊论文
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin); Zeng YP (Zeng Yi-Ping)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots 期刊论文
solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 606-610
作者:  Jin P;  Xu B
收藏  |  浏览/下载：100/0  |  提交时间：2010/04/11
Crack-free InAlGaN quaternary alloy films grown on Si(111) substrate by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2004, 卷号: 273, 期号: 1-2, 页码: 79-85
Wu, JJ; Li, DB; Lu, Y; Han, XX; Li, JM; Wei, HY; Kang, TT; Wang, XH; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载：77/0  |  提交时间：2010/03/17
cracks  
Study on pollution for the photoelectronic material InP 期刊论文
spectroscopy and spectral analysis, 2002, 卷号: 22, 期号: 4, 页码: 550-551
Xu JC; Ding XP; Chen DQ
收藏  |  浏览/下载：42/0  |  提交时间：2010/08/12
Electrical Transport Properties of Annealed Undoped InP 期刊论文
半导体学报, 2002, 卷号: 23, 期号: 1, 页码: 1-5
Zhao Youwen; Luo Yilin; Sun Niefeng; S Fung; Beling C D; Sun Tongnian; Lin Lanyin
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/23
Hydrogen behavior in GaN epilayers grown by NH3-MBE 期刊论文
journal of crystal growth, 2001, 卷号: 227, 期号: 0, 页码: 371-375
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：99/8  |  提交时间：2010/08/12
Hydrogen behavior in GaN epilayers grown by NH3-MBE 会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Kong MY; Zhang JP; Wang XL; Sun DZ
收藏  |  浏览/下载：12/0  |  提交时间：2010/11/15
Hydrogen-dependent lattice dilation in GaN 期刊论文
semiconductor science and technology, 2000, 卷号: 15, 期号: 6, 页码: 619-621
Zhang JP; Wang XL; Sun DZ; Kong MY
收藏  |  浏览/下载：36/0  |  提交时间：2010/08/12

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