Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots

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	Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots
	Jin P; Xu B
刊名	solid state communications
	2006
卷号	137 期号:11 页码:606-610
关键词	nanostructures semiconductors optical properties luminescence WAVELENGTH NANOSTRUCTURES INTERBAND LASERS
ISSN号	0038-1098
通讯作者	lei, w, chinese acad sci, inst semicond, key lab semicond mat sci, pob 912, beijing 100083, peoples r china. e-mail: ahleiwen@red.semi.ac.cn
中文摘要	we have observed an unusual temperature sensitivity of the photoluminescence (pl) peak energy for inas quantum dots grown on inas quantum wires (qdows) on inp substrate. the net temperature shift of pl wavelength of the qdows ranges from 0.8 to -4. angstrom/degrees c depending upon the si doping concentration in the samples. this unusual temperature behavior can be mainly ascribed to the stress amplification in the qdows when the thermal strain is transferred from the surrounding inas wires. this offers an opportunity for realizing quantum dot laser devices with a temperature insensitive lasing wavelength. (c) 2006 elsevier ltd. all rights reserved.
学科主题	半导体材料
收录类别	SCI
语种	英语
公开日期	2010-04-11
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/10756]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P,Xu B. Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots[J]. solid state communications,2006,137(11):606-610.
APA	Jin P,&Xu B.(2006).Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots.solid state communications,137(11),606-610.
MLA	Jin P,et al."Anomalous temperature dependence of photoluminescence peak energy in InAs/InAlAs/InP quantum dots".solid state communications 137.11(2006):606-610.