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Effect of high temperature AlGaN buffer thickness on GaN Epilayer grown on Si(111) substrates 期刊论文
journal of materials science-materials in electronics, 2011, 卷号: 22, 期号: 8, 页码: 1028-1032
作者:  Pan X
收藏  |  浏览/下载:20/0  |  提交时间:2011/09/14
Surface roughness scattering in two dimensional electron gas channel 期刊论文
applied physics letters, 2010, 卷号: 97, 期号: 26, 页码: article no.262111
Liu B; Lu YW; Jin GR; Zhao Y; Wang XL; Zhu QS; Wang ZG
收藏  |  浏览/下载:48/5  |  提交时间:2011/07/05
Formation trends of ordered self-assembled nanoislands on stepped substrates 期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 073512
Liang S (Liang S.); Zhu HL (Zhu H. L.); Kong DH (Kong D. H.); Wang W (Wang W.)
收藏  |  浏览/下载:12/0  |  提交时间:2010/11/14
An internally-matched GaN HEMTs device with 45.2 W at 8 GHz for X-band application 期刊论文
solid-state electronics, 2009, 卷号: 53, 期号: 3, 页码: 332-335
作者:  Zhang ML;  Hou QF
收藏  |  浏览/下载:129/30  |  提交时间:2010/03/08
Al composition variations in AlGaN films grown on low-temperature GaN buffer layer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2008, 卷号: 310, 期号: 24, 页码: 5266-5269
作者:  Yang H;  Zhao DG;  Zhu JJ;  Yang H;  Zhang SM
收藏  |  浏览/下载:182/43  |  提交时间:2010/03/08
Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode 会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Wang, XH; Wang, XL; Xiao, HL; Feng, C; Wang, XY; Wang, BZ; Yang, CB; Wang, JX; Wang, CM; Ran, JX; Hu, GX; Li, JM
收藏  |  浏览/下载:43/0  |  提交时间:2010/03/09
Growth of 0.55eV-GaInAsSb Quaternary Alloy Films for a Thermophotovoltaic Device by Liquid Phase Epitaxy 期刊论文
半导体学报, 2008, 卷号: 29, 期号: 7, 页码: 1258-1262
作者:  Yang Xiaoli;  Wang Yu
收藏  |  浏览/下载:17/0  |  提交时间:2010/11/23
MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate 期刊论文
journal of crystal growth, 2007, 卷号: 298 sp.iss.si, 期号: 0, 页码: 791-793
Wang XL (Wang Xiaoliang); Wang CM (Wang Cuimei); Hu GX (Hu Guoxin); Mao HL (Mao Hongling); Fang CB (Fang Cebao); Wang JX (Wang Junxi); Ran JX (Ran Junxue); Li HP (Li Hanping); Li JM (Li Jinmin); Wang ZG (Wang, Zhanguo)
收藏  |  浏览/下载:29/0  |  提交时间:2010/03/29
2DEG  
Characteristics of high Al content AlxGa1-xN grown by metalorganic chemical vapor deposition 期刊论文
microelectronics journal, 2007, 卷号: 38, 期号: 8-9, 页码: 838-841
Wang XY (Wang, Xiaoyan); Wang XL (Wang, Xiaoliang); Hu GX (Hu, Guoxin); Wang BZ (Wang, Baozhu); Ma ZY (Ma, Zhiyong); Xiao HL (Xiao, Hongling); Wang CM (Wang, Cuimei); Ran JX (Ran, Junxue); Li JP (Li, Jianping)
收藏  |  浏览/下载:32/0  |  提交时间:2010/03/29
InAs0.3Sb0.7 films grown on (100) GaSb substrates with a buffer layer by liquid-phase epitaxy 期刊论文
journal of crystal growth, 2007, 卷号: 304, 期号: 2, 页码: 472-475
Gao FB (Gao Fubao); Chen NF (Chen NuoFu); Liu L (Liu Lei); Zhang XW (Zhang X. W.); Wu JL (Wu Jinliang); Yin ZG (Yin Zhigang)
收藏  |  浏览/下载:37/0  |  提交时间:2010/03/29


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