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科研机构
半导体研究所 [20]
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期刊论文 [13]
会议论文 [7]
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2011 [1]
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半导体材料 [20]
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Optimized growth of p-type AlGaN electron blocking layer in the GaN-based LED
期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 1, 页码: article no.16108
Wang B
;
Li ZC
;
Yao R
;
Liang M
;
Yan FW
;
Wang GH
收藏
  |  
浏览/下载:93/5
  |  
提交时间:2011/07/05
GaN-based
LED
Al composition
electron blocking layer
TEMPERATURE
ALLOYS
MOVPE
In-Situ Boron and Aluminum Doping and Their Memory Effects in 4H-SiC Homoepitaxial Layers Grown by Hot-Wall LPCVD
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Sun, GS
;
Zhao, YM
;
Wang, L
;
Wang, L
;
Zhao, WS
;
Liu, XF
;
Ji, G
;
Zeng, YP
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/03/09
in-situ doping
boron
aluminum
memory effects
hot-wall LPCVD
4H-SiC
Effect of indium-doped interlayer on the strain relief in GaN films grown on Si(111)
期刊论文
physica status solidi a-applications and materials science, 2008, 卷号: 205, 期号: 2, 页码: 294-299
Wu, JJ
;
Zhao, LB
;
Zhang, GY
;
Liu, XL
;
Zhu, QS
;
Wang, ZG
;
Jia, QJ
;
Guo, LP
;
Hu, TD
收藏
  |  
浏览/下载:65/3
  |  
提交时间:2010/03/08
CHEMICAL-VAPOR-DEPOSITION
TEMPERATURE ALN INTERLAYERS
PHASE EPITAXY
OPTICAL-PROPERTIES
SURFACTANT
SUBSTRATE
STRESS
SI
REDUCTION
SAPPHIRE
Low threshold current density operation of strain-compensated quantum cascade laser
期刊论文
chinese physics letters, 2007, 卷号: 24, 期号: 3, 页码: 717-720
作者:
Li L
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  |  
浏览/下载:77/0
  |  
提交时间:2010/03/29
MU-M
Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
;
Guo SL (Guo S. L.)
;
Chu JH (Chu J. H.)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
QUANTUM-WELL STRUCTURES
PHOTOLUMINESCENCE SPECTRA
HEMTS
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:166/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Aluminium doping induced enhancement of p-d coupling in ZnO
期刊论文
journal of physics-condensed matter, 2006, 卷号: 18, 期号: 11, 页码: 3081-3087
作者:
Han XX
;
Wei HY
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  |  
浏览/下载:44/0
  |  
提交时间:2010/04/11
ELECTRONIC-STRUCTURE CALCULATIONS
II-VI SEMICONDUCTORS
THIN-FILMS
PHOTOELECTRON-SPECTROSCOPY
DOPED ZNO
1ST-PRINCIPLES
CONDUCTION
STATES
Electrical properties and electroluminescence of 4H-SiC p-n junction diodes
期刊论文
journal of rare earths, 2004, 卷号: 22 sp.iss.si, 期号: 0, 页码: 275-278
Sun, GS
;
Zhang, YX
;
Gao, X
;
Wang, L
;
Zhao, WS
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:87/0
  |  
提交时间:2010/03/17
4H-SiC
Study of infrared luminescence from Er-implanted GaN films
会议论文
international conference on materials for advanced technologies, singapore, singapore, dec 07-12, 2003
Chen WD
;
Song SF
;
Zhu JJ
;
Wang XL
;
Chen CY
;
Hsu CC
收藏
  |  
浏览/下载:24/0
  |  
提交时间:2010/11/15
doping
metalorganic chemical vapor deposition
molecular beam epitaxy
gallium compounds
semiconducting gallium compounds
ERBIUM
Micro-fabricated Al0.3Ga0.7As pyramids for potential SPM applications
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Sun, J
;
Hu, LZ
;
Sun, YC
;
Wang, ZY
收藏
  |  
浏览/下载:59/0
  |  
提交时间:2010/03/29
GROWTH
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