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| MOCVD growth of a-plane InN films on r-Al2O3 with different buffer layers 期刊论文 journal of crystal growth, 2011, 卷号: 319, 期号: 1, 页码: 114-117 作者: Jia CH; Song HP 收藏  |  浏览/下载:118/2  |  提交时间:2011/07/05
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| Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010 作者: Yang T; Yang XG; Wang KF 收藏  |  浏览/下载:63/2  |  提交时间:2011/07/05
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| Room-temperature spin photocurrent spectra at interband excitation and comparison with reflectance-difference spectroscopy in InGaAs/AlGaAs quantum wells 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 5, 页码: article no.53519 Yu JL; Chen YH; Jiang CY; Liu Y; Ma H 收藏  |  浏览/下载:36/4  |  提交时间:2011/07/05
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| Effects of ultra-low Al alloying In(Al) As layer on the formation and evolution of InAs/GaAs quantum dots 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.94311 作者: Xu B; Zhou GY; Ye XL; Zhang HY 收藏  |  浏览/下载:53/5  |  提交时间:2011/07/05
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| Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者: Duan RF 收藏  |  浏览/下载:80/4  |  提交时间:2011/07/05
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| Valence band offset of GaN/diamond heterojunction measured by X-ray photoelectron spectroscopy 期刊论文 applied surface science, 2011, 卷号: 257, 期号: 18, 页码: 8110-8112 作者: Shi K; Jiao CM; Song HP 收藏  |  浏览/下载:94/7  |  提交时间:2011/07/05
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| Study of molecular-beam epitaxy growth on patterned GaAs (1 0 0) substrates by masked indium ion implantation 期刊论文 journal of crystal growth, 2011, 卷号: 318, 期号: 1, 页码: 572-575 作者: Xu B; Jin P; Ye XL 收藏  |  浏览/下载:63/1  |  提交时间:2011/07/05
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| Growth Simulations of Self-Assembled Nanowires on Stepped Substrates 期刊论文 ieee journal of selected topics in quantum electronics, 2011, 卷号: 17, 期号: 4, 页码: 960-965 Liang S; Kong DH; Zhu HL; Wang W 收藏  |  浏览/下载:26/0  |  提交时间:2012/02/06
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| Well-aligned Zn-doped tilted InN nanorods grown on r-plane sapphire by MOCVD 期刊论文 nanotechnology, 2011, 卷号: 22, 期号: 23, 页码: article no.235603 作者: Song HP 收藏  |  浏览/下载:69/3  |  提交时间:2011/07/05
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| GaN grown with InGaN as a weakly bonded layer 期刊论文 crystengcomm, 2011, 卷号: 13, 期号: 5, 页码: 1580-1585 作者: Wei HY; Song HP 收藏  |  浏览/下载:63/4  |  提交时间:2011/07/05
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