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科研机构
半导体研究所 [12]
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会议论文 [12]
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2009 [1]
2008 [1]
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半导体材料 [12]
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Heteroepitaxial Growth of 3C-SiC on Si (111) Substrate using AlN as a Buffer Layer
会议论文
international conference on silicon carbide and related materials, otsu, japan, oct 14-19, 2007
Zhao, YM
;
Sun, GS
;
Liu, XF
;
Li, JY
;
Zhao, WS
;
Wang, L
;
Li, JM
;
Zeng, YP
收藏
  |  
浏览/下载:54/0
  |  
提交时间:2010/03/09
Silicon Carbide
Aluminum Nitride
buffer layer
LPCVD
AlGaN/GaN/InGaN/GaN DH-HEMTs structure with an AlN interlayer grown by MOCVD
会议论文
34th international symposium on compound semiconductors, kyoto, japan, oct 15-18, 2007
Tang, J
;
Wang, XL
;
Xiao, HL
;
Ran, JX
;
Wang, CM
;
Wang, XY
;
Hu, GX
;
Li, JM
收藏
  |  
浏览/下载:46/0
  |  
提交时间:2010/03/09
PERFORMANCE
HETEROSTRUCTURES
OPTIMIZATION
MOBILITY
High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)
会议论文
33rd international symposium on compound semiconductors, vancouver, canada, aug 13-17, 2006
Wang, XY (Wang, Xiaoyan)
;
Wang, XL (Wang, Xiaoliang)
;
Wang, BZ (Wang, Baozhu)
;
Xiao, HL (Xiao, Hongling)
;
Liu, HX (Liu, Hongxin)
;
Wang, JX (Wang, Junxi)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:125/38
  |  
提交时间:2010/03/29
BUFFER LAYER
STRESS
PHOTODIODES
REDUCTION
DETECTORS
SAPPHIRE
EPITAXY
GROWTH
Heterojunction solar cells with n-type nanocrystalline silicon emitters on p-type c-Si wafers
会议论文
21st international conference on amorphous and nanocrystalline semiconductors, lisbon, portugal, sep 04-09, 2005
Xu Y (Xu Ying)
;
Hu ZH (Hu Zhihua)
;
Diao HW (Diao Hongwei)
;
Cai Y (Cai Yi)
;
Zhang SB (Zhang Shibin)
;
Zeng XB (Zeng Xiangbo)
;
Hao HY (Hao Huiying)
;
Liao XB (Liao Xianbo)
;
Fortunato E (Fortunato Elvira)
;
Martins R (Martins Rodrigo)
收藏
  |  
浏览/下载:237/57
  |  
提交时间:2010/03/29
silicon
Molecular beam epitaxial growth of GaN on 3c-SiC/Si(111) substrates using a thick AIN buffer layer
会议论文
13th international conference on semiconducting and insulating materials (simc xiii), beijing, peoples r china, sep 20-25, 2004
Gao, X
;
Li, JM
;
Sun, GS
;
Zhang, NH
;
Wang, L
;
Zhao, WS
;
Zeng, YP
收藏
  |  
浏览/下载:135/48
  |  
提交时间:2010/03/29
SI(111)
ALN
Microstructural and compositional characteristics of GaN films grown on a ZnO-buffered Si(111) wafer
会议论文
international wuhan symposium on advanced electron microscopy (iwsaem), wuhan, peoples r china, oct 17-21, 2003
Luo XH
;
Wang RM
;
Zhang XP
;
Zhang HZ
;
Yu DP
;
Luo MC
收藏
  |  
浏览/下载:18/1
  |  
提交时间:2010/10/29
transmission electron microscopy
electron energy loss spectroscopy
molecular beam epitaxy
gallium nitride
CHEMICAL-VAPOR-DEPOSITION
EPITAXY
LAYER
High-quality metamorphic HEMT grown on GaAs substrates by MBE
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Zeng YP
;
Cao X
;
Cui LJ
;
Kong MY
;
Pan L
;
Wang BQ
;
Zhu ZP
收藏
  |  
浏览/下载:8/0
  |  
提交时间:2010/11/15
molecular beam epitaxy
high electron mobility transistors
DENSITY
Orientation relationship between hexagonal inclusions and cubic GaN grown on GaAs(001) substrates
会议论文
11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000
Qu B
;
Zheng XH
;
Wang YT
;
Xu DP
;
Lin SM
;
Yang H
;
Liang JW
收藏
  |  
浏览/下载:23/0
  |  
提交时间:2010/11/15
X-ray diffraction
nitrides
semiconducting III-V materials
PHASE
FILMS
In situ annealing treatment and In-doping of GaN epilayers grown by MOVPE
会议论文
10th international conference on metalorganic vapor phase epitaxy (icmovpe-x), sapporo, japan, jun 05-09, 2000
Lu DC
;
Wang CX
;
Yuan HR
;
Liu XL
;
Wang XH
收藏
  |  
浏览/下载:9/0
  |  
提交时间:2010/11/15
GaN
annealing treatment
In-doping
MOVPE
photoluminescence
CHEMICAL-VAPOR-DEPOSITION
PHASE EPITAXY
BUFFER LAYER
FILMS
SAPPHIRE
The content calculation of hexagonal phase inclusions in cubic GaN films on GaAs(001) substrates grown by metalorganic chemical vapor deposition
会议论文
1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999
Sun XL
;
Wang YY
;
Yang H
;
Li JB
;
Zheng LX
;
Xu DP
;
Wang ZG
收藏
  |  
浏览/下载:13/0
  |  
提交时间:2010/11/15
metalorganic chemical vapor deposition
cubic GaN
hexagonal phase content
4-circle X-ray double crystal diffraction
MOLECULAR-BEAM EPITAXY
GALLIUM NITRIDE
THIN-FILMS
SILICON
GAAS
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