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CORC

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GaN high electron mobility transistors with AlInN back barriers 期刊论文
journal of alloys and compounds, 2016, 卷号: 662, 页码: 16-19
X.G. He; D.G. Zhao; D.S. Jiang; J.J. Zhu; P. Chen; Z.S. Liu; L.C. Le; J. Yang; X.J. Li; J.P. Liu; L.Q. Zhang; H. Yang
收藏  |  浏览/下载：13/0  |  提交时间：2017/03/10
Strained Germanium-Tin (GeSn) P-Channel Metal-Oxide-Semiconductor Field-Effect Transistors Featuring High Effective Hole Mobility 期刊论文
international journal of thermophysics, 2015, 卷号: 36, 页码: 980–986
Yan Liu; Jing Yan; Hongjuan Wang; Buwen Cheng; Genquan Han
收藏  |  浏览/下载：24/0  |  提交时间：2016/03/22
High hole mobility GeSn on insulator formed by self-organized seeding lateral growth 期刊论文
journal of physics d: applied physics, 2015, 卷号: 48, 页码: 445103
Zhi Liu; Juanjuan Wen; Xu Zhang; Chuanbo Li; Chunlai Xue; Yuhua Zuo; Buwen Cheng; Qiming Wang
收藏  |  浏览/下载：20/0  |  提交时间：2016/02/16
Control of residual carbon concentration in GaN high electron mobility transistor and realization of high-resistance GaN grown by metal-organic chemical vapor deposition 期刊论文
thin solid films, 2014, 卷号: 564, 页码: 135-139
He, XG; Zhao, DG; Jiang, DS; Liu, ZS; Chen, P; Le, LC; Yang, J; Li, XJ; Zhang, SM; Zhu, JJ; Wang, H; Yang, H
收藏  |  浏览/下载：32/0  |  提交时间：2015/03/25
Electric field driven plasmon dispersion in AlGaN/GaN high electron mobility transistors 期刊论文
chinese physics b, 2013, 卷号: 22, 期号: 11, 页码: 117306
Tan, Ren-Bing; Qin, Hua; Zhang, Xiao-Yu; Xu, Wen
收藏  |  浏览/下载：13/0  |  提交时间：2014/05/16
Metal stanogermanide contacts with enhanced thermal stability for high mobility germanium-tin field-effect transistor 期刊论文
international symposium on vlsi technology, systems, and applications, proceedings, 2012, 页码: 6210151
Wang, Lanxiang; Han, Genquan; Su, Shaojian; Cheng, Buwen; Yeo, Yee-Chia; Zhou, Qian; Yang, Yue; Guo, Pengfei; Wang, Wei; Tong, Yi; Lim, Phyllis Shi Ya; Xue, Chunlai; Wang, Qiming
收藏  |  浏览/下载：30/0  |  提交时间：2013/05/07
High-mobility germanium-tin(GeSn) P-channel MOSFETs featuring metallic source/drain and sub-370C process modules 期刊论文
technical digest- international electron devices meeting, iedm, 2011, 页码: 16.7.1-16.7.3
Han, Genquan; Su, Shaojian; Zhan, Chunlei; Zhou, Qian; Yang, Yue; Wang, Lanxiang; Guo, Pengfei; Wei, Wang; Wong, Choun Pei; Shen, Ze Xiang; Cheng, Buwen; Yeo, Yee-Chia
收藏  |  浏览/下载：22/0  |  提交时间：2012/06/13
The investigation on carrier distribution in InGaN/GaN multiple quantum well layers 期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93117
作者:  Yang H;  Zhu JH;  Wang H;  Zhang SM;  Yang H
收藏  |  浏览/下载：49/3  |  提交时间：2011/07/05
Room temperature GaN/AlGaN self-mixing terahertz detector enhanced by resonant antennas 期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 25, 页码: 252103
Sun, Y.F.; Sun, J.D.; Zhou, Y.; Tan, R.B.; Zeng, C.H.; Xue, W.; Qin, H.; Zhang, B.S.; Wu, D.M.,
收藏  |  浏览/下载：36/0  |  提交时间：2012/06/13
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载：50/4  |  提交时间：2010/03/08

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