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Study of N-polar GaN growth with a high resistivity by metal-organic chemical vapor deposition 期刊论文
vacuum, 2015, 卷号: 119, 期号: 2015, 页码: 63e67
Junyan Jiang; Yuantao Zhang; Fan Yang; Zhen Huang; Long Yan; Pengchong Li; Chen Chi; Degang Zhao; Baolin Zhang; Guotong Du
收藏  |  浏览/下载:14/0  |  提交时间:2016/03/23
Indium Compositional Homogeneity in In0.17Al0.83N Epilayers Grown by Metal Organic Chemical Vapor Deposition 期刊论文
applied physics express, 2012, 卷号: 5, 期号: 10, 页码: 101002
Wang JM (Wang, Jiaming); Xu FJ (Xu, Fujun); Huang CC (Huang, Chengcheng); Xu ZY (Xu, Zhengyu); Zhang X (Zhang, Xia); Wang Y (Wang, Yan); Ge WK (Ge, Weikun); Wang XQ (Wang, Xinqiang); Yang ZJ (Yang, Zhijian); Shen B (Shen, Bo); Li W (Li, Wei); Wang WY (Wang, Weiying); Jin P (Jin, Peng)
收藏  |  浏览/下载:19/0  |  提交时间:2013/03/27
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector 期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Cai LE; Zhang BP; Zhang JY; Wu CM; Jiang F; Hu XL; Chen M; Wang QM
收藏  |  浏览/下载:43/1  |  提交时间:2011/07/05
DIODES  
Stable multiplication gain in GaN p-i-n avalanche photodiodes with large device area 期刊论文
journal of physics d-applied physics, 2009, 卷号: 42, 期号: 1, 页码: art. no. 015108
作者:  Wang H;  Zhao DG;  Zhang SM;  Yang H;  Yang H
收藏  |  浏览/下载:169/40  |  提交时间:2010/03/08
Thickness dependent dislocation, electrical and optical properties in InN films grown by MOCVD 期刊论文
acta physica sinica, 2009, 卷号: 58, 期号: 5, 页码: 3416-3420
作者:  Li Y;  Chen P;  Jiang DS;  Wang H;  Wang ZG
收藏  |  浏览/下载:49/4  |  提交时间:2010/03/08
Substantial photo-response of InGaN p-i-n homojunction solar cells 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055009
Zeng SW; Zhang BP; Sun JW; Cai JF; Chen C; Yu JZ
收藏  |  浏览/下载:58/7  |  提交时间:2010/03/08
Interaction between the intrinsic second- and third-order optical fields in an Al0.53Ga0.47N/GaN heterostructure 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 16, 页码: art. no. 161112
作者:  Chen P
收藏  |  浏览/下载:47/1  |  提交时间:2010/03/08
Characterization of AlGaN on GaN template grown by MOCVD - art. no. 68410K 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, JC; Wang, JX; Liu, NX; Liu, Z; Li, JM
收藏  |  浏览/下载:41/0  |  提交时间:2010/03/09
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko)
收藏  |  浏览/下载:57/0  |  提交时间:2010/03/29
A 1.5 mu m n-type InGaAsP/InGaAsP modulation-doped multiple quantum well DFB laser by MOCVD 期刊论文
semiconductor science and technology, 2006, 卷号: 21, 期号: 3, 页码: 306-310
Zhang RY; Wang W; Zhou F; Wang BJ; Wang LF; Bian J; Zhao LJ; Zhu HL; Jian SS
收藏  |  浏览/下载:47/0  |  提交时间:2010/04/11


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