Substantial photo-response of InGaN p-i-n homojunction solar cells

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	Substantial photo-response of InGaN p-i-n homojunction solar cells
	Zeng SW ; Zhang BP ; Sun JW ; Cai JF ; Chen C ; Yu JZ
刊名	semiconductor science and technology
	2009
卷号	24 期号:5 页码:art. no. 055009
关键词	FUNDAMENTAL-BAND GAP INN ABSORPTION ALLOYS ENERGY
ISSN号	0268-1242
通讯作者	zhang bp xiamen univ dept phys xiamen 361005 fujian peoples r china. e-mail address: bzhang@xmu.edu.cn
中文摘要	ingan p-i-n homojunction structures were grown by metal-organic chemical vapor deposition, and solar cells with different p-contact schemes were fabricated. x-ray diffraction measurements demonstrated that the epitaxial layers have a high crystalline quality. solar cells with semitransparent p-contact exhibited a fill factor (ff) of 69.4%, an open-circuit voltage (v-oc) of 2.24 v and an external quantum efficiency (eqe) of 41.0%. on the other hand, devices with grid p-contact showed the corresponding values of 57.6%, 2.36 v, 47.9% and a higher power density. these results indicate that significant photo-responses can be achieved in ingan p-i-n solar cells.
学科主题	光电子学
收录类别	SCI
资助信息	national high technology research and development program of china 2006aa03z409 xiamen municipal science & technology bureau 2006aa03z110 this work was supported in part by national high technology research and development program of china (2006aa03z409) and a research program of xiamen municipal science & technology bureau (2006aa03z110).
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/7203]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Zeng SW,Zhang BP,Sun JW,et al. Substantial photo-response of InGaN p-i-n homojunction solar cells[J]. semiconductor science and technology,2009,24(5):art. no. 055009.
APA	Zeng SW,Zhang BP,Sun JW,Cai JF,Chen C,&Yu JZ.(2009).Substantial photo-response of InGaN p-i-n homojunction solar cells.semiconductor science and technology,24(5),art. no. 055009.
MLA	Zeng SW,et al."Substantial photo-response of InGaN p-i-n homojunction solar cells".semiconductor science and technology 24.5(2009):art. no. 055009.