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科研机构
半导体研究所 [24]
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期刊论文 [23]
会议论文 [1]
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2011 [1]
2009 [1]
2008 [3]
2007 [3]
2006 [6]
2005 [3]
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光电子学 [24]
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Very long wavelength quantum dot infrared photodetector using a modified dots-in-a-well structure with AlGaAs insertion layers
期刊论文
applied physics letters, 2011, 卷号: 98, 期号: 10, 页码: article no.103507
作者:
Wei Y
;
Huo YH
;
Zhang YH
;
Huang JL
;
Ma WQ
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  |  
浏览/下载:68/4
  |  
提交时间:2011/07/06
MU-M
DETECTOR
TEMPERATURE
GROWTH
Investigation of gain recovery for InAs/GaAs quantum dot semiconductor optical amplifiers by rate equation simulation
期刊论文
optical and quantum electronics, 2009, 卷号: 41, 期号: 8, 页码: 613-626
Xiao JL (Xiao Jin-Long)
;
Yang YD (Yang Yue-De)
;
Huang YZ (Huang Yong-Zhen)
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  |  
浏览/下载:89/2
  |  
提交时间:2010/08/17
Quantum dots (QDs)
Semiconductor optical amplifiers (SOAs)
Gain recovery
CARRIER DISTRIBUTION
DYNAMICS
SATURATION
RELAXATION
LASERS
MODEL
Effects of accumulated strain on the surface and optical properties of stacked 1.3 mu m InAs/GaAs quantum dot structures
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 6, 页码: 2182-2184
作者:
Yang T
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  |  
浏览/下载:76/8
  |  
提交时间:2010/03/08
InAs quantum dots
Ultrafast carrier dynamics in undoped and p-doped InAs/GaAs quantum dots characterized by pump-probe reflection measurements
期刊论文
journal of applied physics, 2008, 卷号: 103, 期号: 8, 页码: art. no. 083121
Liu, HY
;
Meng, ZM
;
Dai, QF
;
Wu, LJ
;
Guo, Q
;
Hu, W
;
Liu, SH
;
Lan, S
;
Yang, T
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  |  
浏览/下载:54/3
  |  
提交时间:2010/03/08
ENERGY RELAXATION
ELECTRON RELAXATION
CAPTURE
PHONON
INAS
GAAS
TEMPERATURE
DEPENDENCE
DENSITY
TIME
Polarization dependence of absorption in strongly vertically coupled InAs/GaAs quantum dots for two-color far-infrared photodetector
期刊论文
physica e-low-dimensional systems & nanostructures, 2008, 卷号: 40, 期号: 3, 页码: 633-636
作者:
Xu B
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  |  
浏览/下载:34/4
  |  
提交时间:2010/03/08
quantum dot
Defects around self-organized InAs quantum dots measured by slow positron beam
期刊论文
applied physics letters, 2007, 卷号: 91, 期号: 9, 页码: art.no.093510
作者:
Jin P
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  |  
浏览/下载:38/0
  |  
提交时间:2010/03/29
HIGH-POWER
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m
期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao)
;
Tatebayashi J (Tatebayashi, Jun)
;
Aoki K (Aoki, Kanna)
;
Nishioka M (Nishioka, Masao)
;
Arakawa Y (Arakawa, Yasuhiko)
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  |  
浏览/下载:57/0
  |  
提交时间:2010/03/29
CHEMICAL-VAPOR-DEPOSITION
Calculation of energy levels in InGaAs/GaAs quantum dot array
期刊论文
acta physica sinica, 2007, 卷号: 56, 期号: 9, 页码: 5429-5435
Xiao-Jie, Y (Yang Xiao-Jie)
;
Qing, W (Wang Qing)
;
Wen-Quan, M (Ma Wen-Quan)
;
Liang-Hui, C (Chen Liang-Hui)
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  |  
浏览/下载:40/0
  |  
提交时间:2010/03/29
InGaAs
Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field
期刊论文
acta physica sinica, 2006, 卷号: 55, 期号: 10, 页码: 5023-5029
Liu YM (Liu Yu-Min)
;
Yu ZY (Yu Zhong-Yuan)
;
Yang HB (Yang Hong-Bo)
;
Huang YZ (Huang Yong-Zhen)
收藏
  |  
浏览/下载:39/0
  |  
提交时间:2010/04/11
strain
semiconductor quantum dot
self-organization
ELECTRONIC-STRUCTURE
FINITE-ELEMENT
STATE
Effect of GaAS(100) 2 degrees surface misorientation on the formation and optical properties of MOCVD grown InAs quantum dots
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 23, 页码: 8126-8130
Liang S (Liang S.)
;
Zhu HL (Zhu H. L.)
;
Ye XL (Ye X. L.)
;
Wang W (Wang W.)
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  |  
浏览/下载:39/0
  |  
提交时间:2010/04/11
photoluminescence
quantum dots
indium arsenide
1.3 MU-M
CHEMICAL-VAPOR-DEPOSITION
PHASE-EPITAXY
GAAS
LUMINESCENCE
SUBSTRATE
ISLANDS
DENSITY
LASERS
LAYER
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