Defects around self-organized InAs quantum dots measured by slow positron beam

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	Defects around self-organized InAs quantum dots measured by slow positron beam
	Jin P
刊名	applied physics letters
	2007
卷号	91 期号:9 页码:art.no.093510
关键词	HIGH-POWER
ISSN号	issn: 0003-6951
通讯作者	meng, xq, wuhan univ, dept phys, wuhan 430072, peoples r china. 电子邮箱地址: mengxq@whu.edu.cn
中文摘要	self-organized inas quantum dots (qds) have been fabricated by molecular beam epitaxy. the authors try to use a slow positron beam to detect defects in and around self-organized qds, and point defects are observed in gaas cap layer above qds. for the self-organized inas qds without strain-reducing layer, it is free of defects. however, by introducing a strain-reducing layer, the density of point defects around larger sized inas qds increased. the above results suggest that low energy positron beam measurements may be a good approach to detect depth profiles of defects in qd materials. (c) 2007 american institute of physics.
学科主题	光电子学
收录类别	SCI
语种	英语
公开日期	2010-03-29
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/9292]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Jin P. Defects around self-organized InAs quantum dots measured by slow positron beam[J]. applied physics letters,2007,91(9):art.no.093510.
APA	Jin P.(2007).Defects around self-organized InAs quantum dots measured by slow positron beam.applied physics letters,91(9),art.no.093510.
MLA	Jin P."Defects around self-organized InAs quantum dots measured by slow positron beam".applied physics letters 91.9(2007):art.no.093510.