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科研机构
半导体研究所 [16]
内容类型
期刊论文 [9]
会议论文 [7]
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2011 [1]
2010 [4]
2009 [2]
2008 [7]
2006 [1]
2004 [1]
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光电子学 [16]
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Light extraction efficiency improvement and strain relaxation in InGaN/GaN multiple quantum well nanopillars
期刊论文
journal of applied physics, 2011, 卷号: 109, 期号: 8, 页码: article no.84339
作者:
Wang H
;
Yang H
;
Yang H
;
Zhu JJ
;
Zhao DG
收藏
  |  
浏览/下载:55/4
  |  
提交时间:2011/07/05
Improvement of efficiency droop of GaN-based light-emitting devices by a rear nitride reflector
期刊论文
physica e-low-dimensional systems & nanostructures, 2010, 卷号: 43, 期号: 1, 页码: 289-292
Cai LE
;
Zhang BP
;
Zhang JY
;
Wu CM
;
Jiang F
;
Hu XL
;
Chen M
;
Wang QM
收藏
  |  
浏览/下载:43/1
  |  
提交时间:2011/07/05
DIODES
AlGaInP LED with surface structure of two-dimensional photonic crystal
期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 11, 页码: 8083-8087
Chen YX (Chen Yi-Xin)
;
Zheng WH (Zheng Wan-Hua)
;
Chen W (Chen Wei)
;
Chen LH (Chen Liang-Hui)
;
Tang YD (Tang Yi-Dan)
;
Shen GD (Shen Guang-Di)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/12/27
AlGaInP LED
photonic crystal
light extraction efficiency
luminous intensity
LIGHT-EMITTING-DIODES
ENHANCEMENT
EXTRACTION
EFFICIENCY
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices
期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:
Zhang SM
;
Wang LJ
;
Wang YT
;
Yang H
;
Wang LJ
收藏
  |  
浏览/下载:112/3
  |  
提交时间:2010/04/05
GaN
light emitting diode
surface treatment
leakage current
THREADING DISLOCATION DENSITIES
LAYERS
NI/AU
LEDS
The fabrication of GaN-based nanopillar light-emitting diodes
期刊论文
journal of applied physics, 2010, 卷号: 108, 期号: 7, 页码: art. no. 074302
Zhu JH (Zhu Jihong)
;
Wang LJ (Wang Liangji)
;
Zhang SM (Zhang Shuming)
;
Wang H (Wang Hui)
;
Zhao DG (Zhao Degang)
;
Zhu JJ (Zhu Jianjun)
;
Liu ZS (Liu Zongshun)
;
Jiang DS (Jiang Desheng)
;
Yang H (Yang Hui)
收藏
  |  
浏览/下载:35/0
  |  
提交时间:2010/11/14
MASKS
NI
Light extraction of GaN LEDs with 2-D photonic crystal structure
期刊论文
chinese optics letters, 2009, 卷号: 7, 期号: 10, 页码: 918-920
Liu HW (Liu Hongwei)
;
Kan Q (Kan Qiang)
;
Wang CX (Wang Chunxia)
;
Yu F (Yu Feng)
;
Xu XS (Xu Xingsheng)
;
Chen HD (Chen Hongda)
收藏
  |  
浏览/下载:248/59
  |  
提交时间:2010/03/08
The junction temperature and forward voltage relationship of GaN-based laser diode
期刊论文
laser physics, 2009, 卷号: 19, 期号: 3, 页码: 400-402
Liu YT
;
Cao Q
;
Song GF
;
Chen LH
收藏
  |  
浏览/下载:310/64
  |  
提交时间:2010/03/08
HIGH-POWER
High-efficiency GaN-based blue LEDs grown on nano-patterned sapphire substrates for solid-state lighting - art. no. 684103
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yan, FW
;
Gao, HY
;
Zhang, Y
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:136/0
  |  
提交时间:2010/03/09
GaN
MOCVD
LED
nano-pattern
SEM
HRXRD
PL
The effects of sapphire substrates processes to the LED efficiency - art. no. 68410M
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Yang, H
;
Chen, Y
;
Wang, LB
;
Yi, XY
;
Fan, JM
;
Liu, ZQ
;
Yang, FH
;
Wang, LC
;
Wang, GH
;
Zeng, YP
;
Li, JM
收藏
  |  
浏览/下载:47/0
  |  
提交时间:2010/03/09
GaN-based LED
grinding
ray tracing
High-brightness GaN-based blue LEDs grown on a wet-patterned sapphire substrate - art. no. 68410T
会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Zhang, Y
;
Yan, FW
;
Gao, HY
;
Li, JM
;
Zeng, YP
;
Wang, GH
;
Yang, FH
收藏
  |  
浏览/下载:36/0
  |  
提交时间:2010/03/09
GaN
nitrides
LED
MOCVD
patterned sapphire substrate
wet etching
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