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CORC

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Efficient 1.53 mu m emission and energy transfer in Si/Er-Si-O multilayer structure 期刊论文
materials research bulletin, 2011, 卷号: 46, 期号: 2, 页码: 262-265
作者:  Xue CL
收藏  |  浏览/下载：63/4  |  提交时间：2011/07/05
A new method to measure the carrier concentration of p-GaN 期刊论文
acta physica sinica, 2011, 卷号: 60, 期号: 3, 页码: article no.37804
Zhou M; Zhao DG
收藏  |  浏览/下载：66/7  |  提交时间：2011/07/05
Influence of AlN buffer layer thickness on structural properties of GaN epilayer grown on Si (111) substrate with AlGaN interlayer 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 3, 页码: art. no. 036801
Wu YX (Wu Yu-Xin); Zhu JJ (Zhu Jian-Jun); Chen GF (Chen Gui-Feng); Zhang SM (Zhang Shu-Ming); Jiang DS (Jiang De-Sheng); Liu ZS (Liu Zong-Shun); Zhao DG (Zhao De-Gang); Wang H (Wang Hui); Wang YT (Wang Yu-Tian); Yang H (Yang Hui)
收藏  |  浏览/下载：128/4  |  提交时间：2010/04/13
Hole concentration test of p-type GaN by analyzing the spectral response of p-n(+) structure GaN ultraviolet photodetector 期刊论文
: journal of alloys and compounds, 2010, 卷号: 492, 期号: 1-2, 页码: 300-302
作者:  Zhu JJ;  Yang H;  Yang H;  Zhao DG;  Zhang SM
收藏  |  浏览/下载：231/10  |  提交时间：2010/04/13
Role of Ga vacancies in enhancing the leakage current of GaN Schottky barrier ultraviolet photodetectors 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 5, 页码: art. no. 057802
Zhao DG (Zhao De-Gang); Zhang S (Zhang Shuang); Liu WB (Liu Wen-Bao); Hao XP (Hao Xiao-Peng); Jiang DS (Jiang De-Sheng); Zhu JJ (Zhu Jian-Jun); Liu ZS (Liu Zong-Shun); Wang H (Wang Hui); Zhang SM (Zhang Shu-Ming); Yang H (Yang Hui); Wei L (Wei Long)
收藏  |  浏览/下载：75/2  |  提交时间：2010/05/24
The influence of growth temperature and input V/III ratio on the initial nucleation and material properties of InN on GaN by MOCVD 期刊论文
semiconductor science and technology, 2009, 卷号: 24, 期号: 5, 页码: art. no. 055001
作者:  Yang H;  Jiang DS;  Zhao DG;  Zhang SM;  Yang H
收藏  |  浏览/下载：91/41  |  提交时间：2010/03/08
NiO removal of Ni/Au Ohmic contact to p-GaN after annealing 期刊论文
半导体学报, 2009, 卷号: 30, 期号: 2, 页码: 101-104
作者:  Yan Tingjing;  Chen Lianghui;  Zhang Shuming
收藏  |  浏览/下载：13/0  |  提交时间：2010/11/23
Plasma induced damage in GaN-based light emitting diodes - art. no. 68410X 会议论文
conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007
Li, Y; Yi, XY; Wang, XD; Guo, JX; Wang, LC; Wang, GH; Yang, FH; Zeng, YP; Li, JM
收藏  |  浏览/下载：51/0  |  提交时间：2010/03/09
GaN  LED  plasma  damage  etch  ICP  PECVD  
The influence of V/III ratio in the initial growth stage on the properties of GaN epilayer deposited on low temperature AlN buffer layer 期刊论文
journal of crystal growth, 2007, 卷号: 303, 期号: 2, 页码: 414-418
作者:  Zhang SM;  Yang H;  Zhu JJ;  Jiang DS;  Yang H
收藏  |  浏览/下载：42/0  |  提交时间：2010/03/29
Stress evolution influenced by oxide charges on GaN metal-organic chemical vapor deposition on silicon-on-insulator substrate 期刊论文
applied physics a-materials science & processing, 2007, 卷号: 89, 期号: 1, 页码: 177-181
Sun J; Chen J; Wang X; Wang J; Liu W; Zhu J; Yang H
收藏  |  浏览/下载：44/0  |  提交时间：2010/03/29
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