CORC

在结果中检索

CORC

浏览/检索结果: 共16条，第1-10条 帮助

限定条件        
已选(0)清除 条数/页：   排序方式：
Theoretical analysis and experimental study of the space-charge-screening effect in uni-traveling-carrier photodiode 期刊论文
acta physica sinica, 2010, 卷号: 59, 期号: 7, 页码: 4524-4529
Guo JC (Guo Jian-Chuan); Zuo YH (Zuo Yu-Hua); Zhang Y (Zhang Yun); Zhang LZ (Zhang Ling-Zi); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载：31/0  |  提交时间：2010/08/17
Effect of surface treatment of GaN based light emitting diode wafers on the leakage current of light emitting diode devices 期刊论文
chinese physics b, 2010, 卷号: 19, 期号: 1, 页码: art. no. 017307
作者:  Zhang SM;  Wang LJ;  Wang YT;  Yang H;  Wang LJ
收藏  |  浏览/下载：120/3  |  提交时间：2010/04/05
The effect of growth temperature on structural quality of GaN/AlN quantum wells by metal-organic chemical vapour deposition 期刊论文
journal of physics d-applied physics, 2008, 卷号: 41, 期号: 10, 页码: art. no. 105106
Ma, ZF; Zhao, DG; Wang, YT; Jiang, DS; Zhang, SM; Zhu, JJ; Liu, ZS; Sun, BJ; Yang, H; Liang, JW
收藏  |  浏览/下载：52/3  |  提交时间：2010/03/08
Influence of the AlN interlayer crystal quality on the strain evolution of GaN layer grown on Si (111) 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 1, 页码: art.no.011914
Liu W; Zhu JJ; Jiang S; Yang H; Wang JF
收藏  |  浏览/下载：33/0  |  提交时间：2010/03/29
Stress reduction in GaN films on (111) silicon-on-insulator substrate grown by metal-organic chemical vapor deposition 期刊论文
materials letters, 2007, 卷号: 61, 期号: 22, 页码: 4416-4419
Sun JY (Sun Jiayin); Chen J (Chen Jing); Wang X (Wang Xi); Wang JF (Wang Jianfeng); Liu W (Liu Wei); Zhu JJ (Zhu Jianjun); Yang H (Yang Hui)
收藏  |  浏览/下载：41/0  |  提交时间：2010/03/29
Effects of rapid thermal annealing on the emission properties of highly uniform self-assembled InAs/GaAs quantum dots emitting at 1.3 mu m 期刊论文
applied physics letters, 2007, 卷号: 90, 期号: 11, 页码: art.no.111912
Yang T (Yang, Tao); Tatebayashi J (Tatebayashi, Jun); Aoki K (Aoki, Kanna); Nishioka M (Nishioka, Masao); Arakawa Y (Arakawa, Yasuhiko)
收藏  |  浏览/下载：57/0  |  提交时间：2010/03/29
Effect of heavy boron doping on the electrical characteristics of SiGeHBTs 期刊论文
semiconductor science and technology, 2007, 卷号: 22, 期号: 8, 页码: 890-895
Yao F (Yao Fei); Xue CL (Xue Chun-Lai); Cheng BW (Cheng Bu-Wen); Wang QM (Wang Qi-Ming)
收藏  |  浏览/下载：73/0  |  提交时间：2010/03/29
Temperature dependence of absorption edge in MOCVD grown GaN 期刊论文
journal of materials science-materials in electronics, 2007, 卷号: 18, 期号: 12, 页码: 1229-1233
Majid A (Majid Abdul); Ali A (Ali Akbar); Zhu JJ (Zhu Jianjun)
收藏  |  浏览/下载：37/0  |  提交时间：2010/03/29
Strain evolution in GaN layers grown on high-temperature AlN interlayers 期刊论文
applied physics letters, 2006, 卷号: 89, 期号: 15, 页码: art.no.152105
Wang JF (Wang J. F.); Yao DZ (Yao D. Z.); Chen J (Chen J.); Zhu JJ (Zhu J. J.); Zhao DG (Zhao D. G.); Jiang DS (Jiang D. S.); Yang H (Yang H.); Liang JW (Liang J. W.)
收藏  |  浏览/下载：31/0  |  提交时间：2010/04/11
Study on Raman spectra of GaMnAs 期刊论文
journal of infrared and millimeter waves, 2006, 卷号: 25, 期号: 3, 页码: 207-212
Ma BS; Wang WJ; Su FH; Den JJ; Jiang CP; Liu HL; Ding K; Zhao JH; Li GH
收藏  |  浏览/下载：41/0  |  提交时间：2010/04/11

©版权所有 ©2017 CSpace - Powered by CSpace