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浏览/检索结果: 共7条，第1-7条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 AlGaN  HT-AlGaN buffer  HT-interlayers  ultraviolet (UV) LED   Low threading-dislocation-density Ge film on Si grown on a pitting Ge buffer layer 会议论文 5th ieee international conference on group iv photonics, sorrento, italy, sep 17-19, 2008 作者:  Xue CL 收藏  |  浏览/下载：52/0  |  提交时间：2010/03/09 SIGE/SI(100) EPITAXIAL-FILMS   The influence of substrate nucleation on HVPE-grown GaN thick films - art. no. 684105 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Wei, TB; Duan, RF; Wang, JX; Li, JM; Huo, ZQ; Zeng, YP 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 HVPE  GaN  nitridation  polarity  etching   Defect influence on luminescence efficiency of GaN-based LEDs 会议论文 11th conference on defects recognition imaging and physics in semiconductors, beijing, peoples r china, sep 13-19, 2005 Li SP (Li Shuping); Fang ZL (Fang Zhilai); Chen HY (Chen Hangyang); Li JC (Li Jinchai); Chen XH (Chen Xiaohong); Yuan XL (Yuan Xiaoli); Sekiguchi T (Sekiguchi Takashi); Wang QM (Wang Qiming); Kang JY (Kang Junyong) 收藏  |  浏览/下载：471/18  |  提交时间：2010/03/29 defects   Reduction in crystallographic tilt of lateral epitaxial overgrown GaN by using new patterned shape mask 会议论文 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 Feng G; Shen XM; Zhu JJ; Zhang BS; Yang H; Liang JW 收藏  |  浏览/下载：15/2  |  提交时间：2010/10/29 BUFFER LAYER  SUBSTRATE  DIODES  GROWTH   Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 作者:  Zhao DG 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 cubic GaN  buffer layer  atomic force microscopy  reflection high-energy electron diffraction  MOVPE   In situ annealing during the growth of relaxed SiGe 会议论文 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition  SiGe  Refractive High Energy Electron Diffraction  tansmission electron microscopy  Double Crystal X-Ray Diffraction  MOBILITY 2-DIMENSIONAL ELECTRON  CRITICAL THICKNESS  STRAINED LAYERS  GE  RELAXATION  EPILAYERS  SI1-XGEX  GESI/SI  GASES