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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 学科主题：光电子学    内容类型：会议论文    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Pockels effect in GaN/Al-x,Gal(1-x)N superlattice with different quantum structures - art. no. 69841G 会议论文 6th international conference on thin film physics and applications, shanghai, peoples r china, sep 25-28, 2007 作者:  Chen P 收藏  |  浏览/下载：45/0  |  提交时间：2010/03/09 pockels effect   AlGaN layers grown on AlGaN buffer layer and GaN buffer layer using strain-relief interlayers - art. no. 68410S 会议论文 conference on solid state lighting and solar energy technologies, beijing, peoples r china, nov 12-14, 2007 Liu, NX; Yan, JC; Liu, Z; Ma, P; Wang, JX; Li, JM 收藏  |  浏览/下载：36/0  |  提交时间：2010/03/09 AlGaN  HT-AlGaN buffer  HT-interlayers  ultraviolet (UV) LED   Quality improvement of GaInNAs/GaAs quantum wells grown by plasma-assisted molecular beam epitaxy 会议论文 11th international conference on molecular beam epitaxy (mbe-xi), beijing, peoples r china, sep 11-15, 2000 Li LH; Pan Z; Zhang W; Lin YW; Wang XY; Wu RH 收藏  |  浏览/下载：10/0  |  提交时间：2010/11/15 characterization  defects  X-ray diffraction  molecular beam epitaxy  nitrides  GAAS   Influences of initial buffer layer deposition on electrical and optical properties in cubic GaN grown on GaAs(100) by metalorganic chemical vapor deposition 会议论文 1st asian conference on chemical vapour deposition, shanghai, peoples r china, may 10-13, 1999 作者:  Zhao DG 收藏  |  浏览/下载：6/0  |  提交时间：2010/11/15 cubic GaN  buffer layer  atomic force microscopy  reflection high-energy electron diffraction  MOVPE   In situ annealing during the growth of relaxed SiGe 会议论文 conference on optical and infrared thin films, san diego, ca, 36739 Li DZ; Huang CJ; Cheng BW; Wang HJ; Yu Z; Zhang CH; Yu JZ; Wang QM 收藏  |  浏览/下载：14/0  |  提交时间：2010/10/29 Ultrahigh Vacuum Chemical Vapor Deposition  SiGe  Refractive High Energy Electron Diffraction  tansmission electron microscopy  Double Crystal X-Ray Diffraction  MOBILITY 2-DIMENSIONAL ELECTRON  CRITICAL THICKNESS  STRAINED LAYERS  GE  RELAXATION  EPILAYERS  SI1-XGEX  GESI/SI  GASES   650nm AlGaInP quantum well lasers for the application of DVD 会议论文 spie conference on photonics technology into the 21st century - semiconductors, microstructures, and nanostructures, singapore, singapore, dec 01-03, 1999 Chen LH; Ma XY; Guo L; Ma J; Ding HY; Cao Q; Wang LM; Zhang GZ; Yang YL; Wang GH; Tan MQ 收藏  |  浏览/下载：13/0  |  提交时间：2010/10/29 DVD  laser diode  visible  AlGaInP  MOCVD  OPERATION  DIODES   High temperature operation of 650nm AlGaInP quantum well laser diodes grown by LP-MOCVD 会议论文 spie conference on optoelectronic materials and devices, taipei, taiwan, jul 09-11, 1998 Ma XY; Cao Q; Wang ST; Guo L; Lian P; Wang LM; Zhang XY; Yang YL; Zhang HQ; Wang GH; Chen LH 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 AlGaInP  quantum well  laser diode  MOCVD   Growth of Fe doped semi-insulating InP by LP-MOCVD 会议论文 conference on integrated optoelectronics ii, beijing, peoples r china, sep 18-19, 1998 Yan XJ; Zhu HL; Wang W; Xu GY; Zhou F; Ma CH; Wang XJ; Tian HL; Zhang JY; Wu RH; Wang QM 收藏  |  浏览/下载：19/0  |  提交时间：2010/10/29 semi-insulating  Fe-doped  MOCVD