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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2019     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 A High Performance Solar-Blind Detector Based on Mixed-Phase Zn0.45Mg0.55O Alloy Nanowires Network 期刊论文 ELECTRONIC MATERIALS LETTERS, 2019, 卷号: 15, 期号: 3, 页码: 303-313 作者:  Ma, Sai;  Feng, Shuanglong;  Kang, Shuai;  Wang, Feng;  Fu, Xie 收藏  |  浏览/下载：57/0  |  提交时间：2019/06/03 Mixed-phase  Zn-0  Mg-0  O  Nanowires network  Solar-blind  UV photodetector   Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2019, 卷号: 775, 页码: 1213-1220 作者:  Chen, Y. P.;  Zheng, C. H.;  Hu, L. Q.;  Chen, Y. R. 收藏  |  浏览/下载：2/0  |  提交时间：2019/11/21 Screw dislocation passivation  GaN-based ultroviolet photodetectors  Metal-semiconductor-metal  Photoelectric performance improvement  ZnO nanorods modification   A High Performance Solar-Blind Detector Based on Mixed–Phase Zn0.45Mg0.55O Alloy Nanowires Network 期刊论文 Electronic Materials Letters, 2019, 卷号: 15, 期号: 3, 页码: 303-313 作者:  Ma, Sai;  Feng, Shuanglong;  Kang, Shuai;  Wang, Feng;  Fu, Xie 收藏  |  浏览/下载：1/0  |  提交时间：2020/02/18 Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations 期刊论文 Journal of Alloys and Compounds, 2019, 卷号: 775, 页码: 1213-1220 作者:  Y.P.Chen;  C.H.Zheng;  L.Q.Hu;  Y.R.Chen 收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24 GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement   Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors 期刊论文 Photonics Research, 2019, 卷号: 7, 期号: 10, 页码: 1127-1133 作者:  Y.Wu;  Z.Li;  K.-W.Ang;  Y.Jia;  Z.Shi 收藏  |  浏览/下载：1/0  |  提交时间：2020/08/24 Monolithic integrated circuits,Chemical vapor deposition,Gallium nitride,III-V semiconductors,Integration,Layered semiconductors,Military applications,Molybdenum compounds,Optical communication,Photodetectors,Photons,Wide band gap semiconductors   High-performance nanoporous-GaN metal-insulator-semiconductor ultraviolet photodetectors with a thermal oxidized β-Ga 2 O 3 layer 期刊论文 Optics Letters, 2019, 卷号: 44, 期号: 9, 页码: 2197-2200 作者:  Ruilin Meng;   Xiaoli Ji;   Zheng Lou;   Jiankun Yang;   Yonghui Zhang;   Zihui Zhang;   Wengang Bi;   Junxi Wang;   Tongbo Wei 收藏  |  浏览/下载：27/0  |  提交时间：2020/08/05