Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations

doi:10.1016/j.jallcom.2018.10.281

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	Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations
	Y.P.Chen; C.H.Zheng; L.Q.Hu; Y.R.Chen
刊名	Journal of Alloys and Compounds
	2019
卷号	775 页码:1213-1220
关键词	GaN-based ultroviolet photodetectors,ZnO nanorods modification,Screw,dislocation passivation,Photoelectric performance improvement
ISSN号	0925-8388
DOI	10.1016/j.jallcom.2018.10.281
英文摘要	It is a critical challenge to realize efficient GaN-based UV photodetectors (UV-PDs) due to the existence of high-density dislocations in the epilayers prepared by heteroepitaxy. In this paper, the method of in-situ modifying the screw dislocations in GaN-based materials with one-dimensional (1D) ZnO nanorods by screw dislocation-driven self-assembled solution growth is developed to engineer and improve the photoelectric performances of the back-illuminated metal-semiconductor-metal (MSM) structure p-GaN UV-PDs. The results show that the in-situ grown 1D ZnO nanorods on the dislocations plays the roles of passivating the dislocations to suppress the dark current, improving the spectral response intensity and extending the spectral response band of the MSM structure UV-PDs. The in-situ modification of 1D ZnO nanomaterials can be developed into a method to engineer and modify the defects viz. threading dislocations of the GaN-based semiconductors so as to achieve the purpose of regulating the performance of the related optoelectronic devices, which can be extended to other material systems of optoelectronic devices. (C) 2018 Elsevier B.V. All rights reserved.
URL标识	查看原文
语种	英语
内容类型	期刊论文
源URL	[http://ir.ciomp.ac.cn/handle/181722/63441]
专题	中国科学院长春光学精密机械与物理研究所
推荐引用方式 GB/T 7714	Y.P.Chen,C.H.Zheng,L.Q.Hu,et al. Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations[J]. Journal of Alloys and Compounds,2019,775:1213-1220.
APA	Y.P.Chen,C.H.Zheng,L.Q.Hu,&Y.R.Chen.(2019).Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations.Journal of Alloys and Compounds,775,1213-1220.
MLA	Y.P.Chen,et al."Improved performance of a back-illuminated GaN-based metal-semiconductor-metal ultraviolet photodetector by in-situ modification of one-dimensional ZnO nanorods on its screw dislocations".Journal of Alloys and Compounds 775(2019):1213-1220.