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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Electron-beam induced synthesis of nanostructures: a review 期刊论文 NANOSCALE, 2016 Gonzalez-Martinez, I. G.; Bachmatiuk, A.; Bezugly, V.; Kunstmann, J.; Gemming, T.; Liu, Z.; Cuniberti, G.; Ruemmeli, M. H. 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 IN-SITU GROWTH  INDUCED EXPLOSIVE CRYSTALLIZATION  METAL OXIDE SURFACES  SOLID-PHASE EPITAXY  INDUCED FRAGMENTATION  RADIATION-DAMAGE  ROOM-TEMPERATURE  THIN-FILMS  HIGH-RESOLUTION  BORON-NITRIDE   Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi2Se3 thin film 期刊论文 NANOSCALE, 2016 Jing, Yumei; Huang, Shaoyun; Zhang, Kai; Wu, Jinxiong; Guo, Yunfan; Peng, Hailin; Liu, Zhongfan; Xu, H. Q. 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/03 TOPOLOGICAL INSULATORS  2 DIMENSIONS  MAGNETORESISTANCE  SURFACE  NONEQUILIBRIUM  LOCALIZATION   Coherent Charge Transport in Ballistic InSb Nanowire Josephson Junctions 期刊论文 SCIENTIFIC REPORTS, 2016 Li, S.; Kang, N.; Fan, D. X.; Wang, L. B.; Huang, Y. Q.; Caroff, P.; Xu, H. Q. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 SUPERCONDUCTING WEAK LINKS  FABRY-PEROT INTERFERENCE  ENERGY-GAP STRUCTURE  CARBON NANOTUBES  MAJORANA FERMIONS  QUANTUM DOTS  SUPERCURRENT  CONDUCTANCE  DEVICES  TRANSISTORS   Schottky barrier heights at the interfaces between pure-phase InAs nanowires and metal contacts 期刊论文 JOURNAL OF APPLIED PHYSICS, 2016 Feng, Boyong; Huang, Shaoyun; Wang, Jiyin; Pan, Dong; Zhao, Jianghua; Xu, H. Q. 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 FIELD-EFFECT TRANSISTORS  DIAMETER   InAs/GaSb core-shell nanowires grown on Si substrates by metal-organic chemical vapor deposition 期刊论文 NANOTECHNOLOGY, 2016 Ji, Xianghai; Yang, Xiaoguang; Du, Wenna; Pan, Huayong; Luo, Shuai; Ji, Haiming; Xu, H. Q.; Yang, Tao 收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03 nanowires  core-shell heterostructure  InAs/GaSb  metal-organic chemical vapor deposition  FIELD-EFFECT TRANSISTORS  III-V NANOWIRES  INASSB NANOWIRES  INGAAS NANOWIRES  GAAS NANOWIRES  PHASE EPITAXY  DEFECT-FREE  HETEROSTRUCTURES  LUMINESCENCE  SILICON   Cross-stacked carbon nanotubes assisted self-separation of freestanding GaN substrates by hydride vapor phase epitaxy 期刊论文 SCIENTIFIC REPORTS, 2016, 卷号: 6 作者:  Wei, Tongbo;  Yang, Jiankun;  Wei, Yang;  Huo, Ziqiang;  Ji, Xiaoli 收藏  |  浏览/下载：5/0  |  提交时间：2019/12/16