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浏览/检索结果: 共6条，第1-6条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 The Investigation on Single Event Function Failure for DC/DC Converters with Three Single Terminal Topological Structures 期刊论文 CHINESE JOURNAL OF ELECTRONICS, 2016, 卷号: 25, 页码: 1097-1100 作者:  Li Pengwei;  Wang Wenyan;  Luo Lei;  Yu Qingkui;  Tang Min 收藏  |  浏览/下载：32/0  |  提交时间：2018/07/16 DC/DC converter  Single event function failure  Sensitive factors  Topological structure   Single-event transient characterization of a radiation-tolerant charge-pump phase-locked loop fabricated in 130 nm pd-soi technology 期刊论文 Ieee transactions on nuclear science, 2016, 卷号: 63, 期号: 4, 页码: 2402-2408 作者:  Chen, Zhuojun;  Lin, Min;  Zheng, Yunlong;  Wei, Zuodong;  Huang, Shuigen 收藏  |  浏览/下载：42/0  |  提交时间：2019/05/09 Heavy-ion testing  Pd-soi  Phase-locked loop  Pulsed-laser testing  Radiation hardening by design  Single-event transients   A PD-SOI based DTI-LOCOS combined cross isolation technique for minimizing TID radiation induced leakage in high density memory 期刊论文 2016, 2016 谯凤英; 潘立阳; 伍冬; 刘利芳; 许军; Qiao Fengying; Pan Liyang; Wu Dong; Liu Lifang; Xu Jun 收藏  |  浏览/下载：3/0 Statistical Analysis on Performance Degradation of 90 nm bulk SiMOS Devices Irradiated by Heavy Ions 其他 2016-01-01 Zhexuan Ren; Xia An; Weikang Wu; Xing Zhang; Ru Huang 收藏  |  浏览/下载：3/0  |  提交时间：2017/12/03 irradiation  saturation  trapped  charges  irradiated  attributed  hardened  intrinsic  leakage  incident  irradiation  saturation  trapped  charges  irradiated  attributed  hardened  intrinsic  leakage  incident   Investigation of a radiation-hardened quasi-SOI device: performance degradation induced by single ion irradiation 期刊论文 SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2016 Wu, Weikang; An, Xia; Que, Taotao; Zhang, Xing; Shen, Dongjun; Guo, Gang; Huang, Ru 收藏  |  浏览/下载：5/0  |  提交时间：2017/12/04 radiation-hardened  quasi-SOI  microdose effect  heavy ion  irradiation  EVENT TRANSIENTS  MOSFETS  IMPACT  TECHNOLOGIES  LOGIC  BULK   An SEU resilient, SET filterable and cost effective latch in presence of PVT variations 期刊论文 Microelectronics Reliability, 2016, 卷号: Vol.63, 页码: 239-250 作者:  Liang,Huaguo;  Li,Xuejun;  Jiang,Cuiyun;  Yan,Aibin;  Ouyang,Yiming 收藏  |  浏览/下载：2/0  |  提交时间：2019/04/22 NANOSCALE CMOS TECHNOLOGY  RADIATION-HARDENED LATCH  TOLERANT LATCH  HIGH-PERFORMANCE  DESIGN  CIRCUITS  SYSTEMS