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浏览/检索结果: 共10条，第1-10条 帮助 限定条件 发表日期：2016     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Investigation on the performance and efficiency droop behaviors of InGaN/GaN multiple quantum well green LEDs with various GaN cap layer thicknesses 期刊论文 VACUUM, 2016, 卷号: 129 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ 收藏  |  浏览/下载：17/0  |  提交时间：2017/03/11 Emission efficiency enhanced by introduction of the homogeneous localization states in InGaN/GaN multiple quantum well LEDs 期刊论文 JOURNAL OF ALLOYS AND COMPOUNDS, 2016, 卷号: 681 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ 收藏  |  浏览/下载：15/0  |  提交时间：2017/03/11 Photovoltaic Response of InGaN/GaN Multi-quantum Well Solar Cells Enhanced by Reducing p-type GaN Resistivity 期刊论文 IEEE JOURNAL OF PHOTOVOLTAICS, 2016, 卷号: 6, 期号: 2 作者:  Yang, J;  Zhao, DG;  Jiang, DS;  Chen, P;  Zhu, JJ 收藏  |  浏览/下载：17/0  |  提交时间：2017/03/11 Current density dependence of transition energy in blue InGaN/GaN MQW LEDs 期刊论文 Physica Status Solidi (C) Current Topics in Solid State Physics, 2016 作者:  Zhang, F.(张峰);  Ikeda, M.;  Zhou, K.;  Liu, Z.S.;  Liu, J.P.(刘建平) 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/11 Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells 期刊论文 SUPERLATTICES AND MICROSTRUCTURES, 2016, 卷号: 97 作者:  Li, X;  Zhao, DG;  Yang, J;  Jiang, DS;  Liu, ZS 收藏  |  浏览/下载：18/0  |  提交时间：2017/03/11 The thickness design of unintentionally doped GaN interlayer matched with background doping level for InGaN-based laser diodes 期刊论文 AIP ADVANCES, 2016, 卷号: 6, 期号: 3 作者:  Chen, P;  Zhao, DG;  Jiang, DS;  Zhu, JJ;  Liu, ZS 收藏  |  浏览/下载：16/0  |  提交时间：2017/03/11 Carrier Localization Effects in InGaN/GaN Multiple-Quantum-Wells LED Nanowires: Luminescence Quantum Efficiency Improvement and "Negative" Thermal Activation Energy 期刊论文 SCIENTIFIC REPORTS, 2016, 卷号: 6 作者:  Bao, W;  Su, ZC;  Zheng, CC;  Ning, JQ(宁吉强);  Xu, SJ 收藏  |  浏览/下载：24/0  |  提交时间：2017/03/11 Overshoot effects of electron on efficiency droop in InGaN/GaN MQW light-emitting diodes 期刊论文 aip advances, 2016, 卷号: 6, 期号: 4, 页码: 045219 Yang Huang; Zhiqiang Liu; Xiaoyan Yi; Yao Guo; Shaoteng Wu; Guodong Yuan; JunXi Wang; Guohong Wang; Jinmin Li 收藏  |  浏览/下载：26/0  |  提交时间：2017/03/16 Shockley–Read–Hall recombination and efficiency droop in InGaN/GaN multiple-quantum-well green light-emitting diodes 期刊论文 Journal of Physics D: Applied Physics, 2016, 卷号: 49, 期号: 14, 页码: 145104 Wei Liu; Degang Zhao; Desheng Jiang; Ping Chen; Zongshun Liu; Jianjun Zhu; Xiang Li; Feng Liang; Jianping Liu; Liqun Zhang; Hui Yang; Yuantao Zhang; Guotong Du 收藏  |  浏览/下载：23/0  |  提交时间：2017/03/10 Anodic etching of GaN based film with a strong phase-separated InGaN/GaN layer: Mechanism and properties 期刊论文 APPLIED SURFACE SCIENCE, 2016, 卷号: 387, 页码: 406-411 作者:  Gao, Qingxue;  Liu, Rong;  Xiao, Hongdi;  Cao, Dezhong;  Liu, Jianqiang 收藏  |  浏览/下载：3/0  |  提交时间：2019/12/16 Phase-separated InGaN/GaN layer  MQW structure  Nanopore  Compressive  stress relaxation