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Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors 会议论文
International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 held as a part of the 229th Meeting of The Electrochemical-Society, 2016-05-29
作者:  Ge, Daohan[1];  Qian, Dongliang[2];  Chen, Guanggui[3];  Zhang, Liqiang[4];  Ren, Naifei[5]
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