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	Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors
	Ge, Daohan[1]; Qian, Dongliang[2]; Chen, Guanggui[3]; Zhang, Liqiang[4]; Ren, Naifei[5]
	2016
会议名称	International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 held as a part of the 229th Meeting of The Electrochemical-Society
会议日期	2016-05-29
页码	257-262
收录类别	EI ; CPCI-S
URL标识	查看原文
WOS记录号	WOS:000406802700029
内容类型	会议论文
URI标识	http://www.corc.org.cn/handle/1471x/5360378
专题	江苏大学
作者单位	1.[1]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 2.[2]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 3.[3]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 4.[4]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China. 5.[5]Jiangsu Univ, Sch Mech Engn, Zhenjiang 212013, Peoples R China.
推荐引用方式 GB/T 7714	Ge, Daohan[1],Qian, Dongliang[2],Chen, Guanggui[3],et al. Fabrication of Graphene/Porous Silicon Nitride Material for Field-Effect Transistors[C]. 见:International Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 held as a part of the 229th Meeting of The Electrochemical-Society. 2016-05-29.

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