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CORC

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典型运放、比较器的电离和位移损伤的研究 学位论文
硕士, 北京: 中国科学院大学, 2015
作者:  姜柯
收藏  |  浏览/下载：86/0  |  提交时间：2015/06/15
Radiation damage effect and post-annealing treatments of NPN-input bipolar operational amplifier in electron radiation environment 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 13, 页码: 302-308
作者:  Jiang, K (Jiang Ke);  Lu, W (Lu Wu);  Hu, TL (Hu Tian-Le);  Wang, X (Wang Xin);  Guo, Q (Guo Qi)
收藏  |  浏览/下载：19/0  |  提交时间：2018/01/25
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: 8
作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Zhang, JX (Zhang Jin-Xin);  Xiao, Y (Xiao Yao)
收藏  |  浏览/下载：19/0  |  提交时间：2017/09/14
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: 11
作者:  Li, P (Li Pei);  Guo, HX (Guo Hong-Xia);  Guo, Q (Guo Qi);  Wen, L (Wen Lin);  Cui, JW (Cui Jiang-Wei)
收藏  |  浏览/下载：21/0  |  提交时间：2015/07/11
Simulation and sesign of single event effect radiation hardening for SiGe heterojunction bipolar transistor 期刊论文
ACTA PHYSICA SINICA, 2015, 卷号: 64, 期号: [db:dc_citation_issue]
作者:  Li Pei;  Guo Hong-Xia;  Guo Qi;  Wen Lin;  Cui Jiang-Wei
收藏  |  浏览/下载：2/0  |  提交时间：2019/12/02
3-D simulation study of single event effects of SiGe heterojunction bipolar transistor in extreme environment 期刊论文
MICROELECTRONICS RELIABILITY, 2015, 卷号: 55, 期号: [db:dc_citation_issue], 页码: 1180-1186
作者:  Zhang Jin-xin;  He Chao-hui;  Guo Hong-xia;  Tang Du;  Xiong Cen
收藏  |  浏览/下载：3/0  |  提交时间：2019/12/02
Single-event response of the SiGe HBT in TCAD simulations and laser microbeam experiment 期刊论文
CHINESE PHYSICS B, 2015, 卷号: 24, 期号: [db:dc_citation_issue]
作者:  Li Pei;  Guo Hong-Xia;  Guo Qi;  Zhang Jin-Xin;  Xiao Yao
收藏  |  浏览/下载：4/0  |  提交时间：2019/12/02
Threshold Voltage Shift Effect of a-Si:H TFTs Under Bipolar Pulse Bias 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Hu, Zhijin; Wang, Lisa Ling; Liao, Congwei; Zeng, Limei; Lee, Chang-Yeh; Lien, Alan; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Integrated a-Si: H Gate Driver With Low-Level Holding TFTs Biased Under Bipolar Pulses 期刊论文
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2015
Hu, Zhijin; Liao, Congwei; Li, Wenjie; Zeng, Limei; Lee, Chang-Yeh; Zhang, Shengdong
收藏  |  浏览/下载：4/0  |  提交时间：2017/12/03
Analysis and Suppression of Circulating Harmonic Currents in a Modular Multilevel Converter Considering the Impact of Dead Time 期刊论文
IEEE TRANSACTIONS ON POWER ELECTRONICS, 2015, 卷号: 30, 期号: 7
作者:  Chen, Baichao;  Chen, Yaojun;  Tian, Cuihua;  Yuan, Jiaxin;  Yao, Xiu
收藏  |  浏览/下载：9/0  |  提交时间：2019/12/05

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