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| Method for measurement of muller-matrix orientation tomogram of polycrystalline networks of optical-anisotropic layers of biological tissues 专利
专利号: UA86607U, 申请日期: 2014-01-10, 公开日期: 2014-01-10
作者: -
  收藏 | 浏览/下载：16/0 | 提交时间：2019/12/31 |
| Rapid solidification of polycrystalline silicon involves feeding the polycrystalline silicon into solidification device, performing directional solidification process, and freezing. 专利
申请日期: 2014-01-01, 公开日期: 2014-01-29
作者: JIANG D LI P REN S TAN Y SHI S
收藏 | 浏览/下载：3/0 | 提交时间：2019/12/11 |
| Local heating solidification polycrystalline silicon impurity removing device, has furnace body whose lower part is connected with graphite pedestal, and moving shaft whose lower end is connected with control device in solid state. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者: JIANG D LI P LIN H TAN Y SHI S WEN
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
| Top electric beam local heating solidification polycrystalline silicon impurity removing device, has gun mounted on upper part of furnace body, where beam point of gun is located on inner side of crucible part. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者: JIANG D LIN H TAN Y SHI S WANG P
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
| Casting polycrystalline silicon ingot, comprises growing polycrystalline silicon in seven growth stages. 专利
申请日期: 2014-01-01, 公开日期: 2014-06-25
作者: JIANG D LI P REN S TAN Y SHI S
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
| Trash function featured crucible pot, has pot body whose wall is formed with hole that is formed with collecting groove, where height of overflow hole is equal to that of pot body that is coated with polycrystalline silicon material. 专利
申请日期: 2014-01-01, 公开日期: 2014-11-05
作者: JIANG D LIN H TAN Y SHI S WEN S
收藏 | 浏览/下载：6/0 | 提交时间：2019/12/11 |
| Polycrystalline silicon reverse solidification device comprises furnace component, vacuum system, charging system, directional solidification smelting system, top lifting mechanism and lifting mechanism. 专利
申请日期: 2014-01-01, 公开日期: 2014-02-05
作者: JIANG D LI P REN S TAN Y SHI S
收藏 | 浏览/下载：1/0 | 提交时间：2019/12/11 |
| Casting polycrystalline silicon ingot, comprises e.g. charging raw material added into bottom of ingot casting furnace by compensating boron element, paving borosilicate material, and adding normal silicon material and silicon-boron alloy. 专利
申请日期: 2014-01-01, 公开日期: 2014-06-11
作者: JIANG D LI J LI P REN S TAN Y SHI S
收藏 | 浏览/下载：2/0 | 提交时间：2019/12/11 |
