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浏览/检索结果: 共34条，第1-10条 帮助 限定条件 发表日期：2011    学科主题：半导体材料     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Spin splitting modulated by uniaxial stress in InAs nanowires 期刊论文 journal of physics-condensed matter, 2011, 卷号: 23, 期号: 1, 页码: art. no. 015801 Liu GH (Liu Genhua); Chen YH (Chen Yonghai); Jia CH (Jia Caihong); Hao GD (Hao Guo-Dong); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：17/0  |  提交时间：2010/12/28 NARROW-GAP SEMICONDUCTOR  INVERSION-ASYMMETRY  QUANTUM DOTS  BAND  STATES   Temperature Compensation for Threshold Current and Slope Efficiency of 1.3 mu m InAs/GaAs Quantum-Dot Lasers by Facet Coating Design 期刊论文 chinese physics letters, 2011, 卷号: 28, 期号: 4, 页码: article no.44201 作者:  Cao YL;  Yang T 收藏  |  浏览/下载：19/0  |  提交时间：2011/07/05 WELL LASERS  DEPENDENCE  DIODE  GAIN   The Research Progress of Quantum Dot Lasers and Photodetectors in China 期刊论文 journal of nanoscience and nanotechnology, 2011, 卷号: 11, 期号: 11 s1, 页码: 9345-9356 Xu PF (Xu Peng-Fei); Ji HM (Ji Hai-Ming); Yang T (Yang Tao); Xu B (Xu Bo); Ma WQ (Ma Wen-Quan); Wang ZG (Wang Zhanguo) 收藏  |  浏览/下载：14/0  |  提交时间：2012/02/22 Effect of antimony irradiation on InAs/Sb:GaAs quantum dots grown by molecular beam epitaxy 期刊论文 semiconductor science and technology, 2011, 卷号: 26, 期号: 7, 页码: article no.75010 作者:  Yang T;  Yang XG;  Wang KF 收藏  |  浏览/下载：65/2  |  提交时间：2011/07/05 HIGH-DENSITY  TEMPERATURE-DEPENDENCE  SELF-FORMATION  LAYERS  WELL  MBE   Effect of growth temperature on the morphology and phonon properties of InAs nanowires on Si substrates 期刊论文 nanoscale research letters, 2011, 卷号: 6, 页码: 463 Li, TF; Chen, YH; Lei, W; Zhou, XL; Luo, S; Hu, YZ; Wang, LJ; Yang, T; Wang, ZG 收藏  |  浏览/下载：18/0  |  提交时间：2012/02/06 RAMAN-SCATTERING  SEMICONDUCTING NANOWIRES  OPTOELECTRONIC DEVICES  PHOSPHIDE NANOWIRES  OPTICAL PHONONS  SILICON  CRYSTALS  SPECTRA   Defect-related emission characteristics of nonpolar m-plane GaN revealed by selective etching 期刊论文 journal of crystal growth, 2011, 卷号: 314, 期号: 1, 页码: 141-145 作者:  Duan RF 收藏  |  浏览/下载：90/4  |  提交时间：2011/07/05 CL  PL  Stacking fault  HVPE  GaN  Nonpolar  CHEMICAL-VAPOR-DEPOSITION  ACCEPTOR PAIR EMISSION  PHASE EPITAXY  GROWN GAN  SEMICONDUCTORS  SAPPHIRE  FILMS  NITRIDE   Improvement of electroluminescent performance of n-ZnO/AlN/p-GaN light-emitting diodes by optimizing the AlN barrier layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 9, 页码: article no.93708 作者:  Zhang XW 收藏  |  浏览/下载：47/3  |  提交时间：2011/07/05 UV ELECTROLUMINESCENCE  THIN-FILMS  ZNO   Redshift and discrete energy level separation of self-assembled quantum dots induced by strain-reducing layer 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 6, 页码: article no.64320 作者:  Yang T 收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05 PHOTOLUMINESCENCE  EMISSION  INALAS   Electron mobility in modulation-doped AlSb/InAs quantum wells 期刊论文 journal of applied physics, 2011, 卷号: 109, 期号: 7, 页码: article no.73703 作者:  Zhang Y;  Li YB 收藏  |  浏览/下载：53/5  |  提交时间：2011/07/05 ACOUSTIC-PHONON-SCATTERING  LOW-POWER APPLICATIONS  TRANSPORT-PROPERTIES  INTERFACE ROUGHNESS  INAS/ALSB HEMTS  HETEROSTRUCTURES  INAS  TRANSISTORS  GAS  LAYERS   The effects of substrate temperature on the properties of diphasic nanocrystalline silicon thin films 期刊论文 optoelectronics and advanced materials-rapid communications, 2011, 卷号: 5, 期号: 40545, 页码: 112-115 Hao HY; Xing J; Li WM; Zeng XB; Kong GL; Liao XB 收藏  |  浏览/下载：81/3  |  提交时间：2011/07/06 Nanocrystalline silicon thin films  Structure  Photoelectrical properties  Stability  MICROCRYSTALLINE SILICON  TRANSITION FILMS  SOLAR-CELLS  HYDROGEN