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Spin states in InAs/AlSb/GaSb semiconductor quantum wells 期刊论文
physical review b, 2009, 卷号: 80, 期号: 3, 页码: art. no. 035303
作者:  Li J
收藏  |  浏览/下载:154/2  |  提交时间:2010/03/08
Resonant tunneling through S- and U-shaped graphene nanoribbons 期刊论文
nanotechnology, 2009, 卷号: 20, 期号: 41, 页码: art. no. 415203
作者:  Wu ZH
收藏  |  浏览/下载:55/2  |  提交时间:2010/03/08
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 期刊论文
journal of applied physics, 2009, 卷号: 105, 期号: 12, 页码: art. no. 123705
Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
收藏  |  浏览/下载:82/4  |  提交时间:2010/03/08
Spin-Hall effect in the generalized honeycomb lattice with Rashba spin-orbit interaction 期刊论文
physics letters a, 2009, 卷号: 373, 期号: 23-24, 页码: 2091-2096
Liu GC; Wang ZG; Li SS
收藏  |  浏览/下载:31/0  |  提交时间:2010/03/08
Quantum mechanical simulation of nanosized metal-oxide-semiconductor field-effect transistor using empirical pseudopotentials: A comparison for charge density occupation methods 期刊论文
journal of applied physics, 2009, 卷号: 106, 期号: 8, 页码: art.no.084510
Jiang XW (Jiang Xiang-Wei); Deng HX (Deng Hui-Xiong); Li SS (Li Shu-Shen); Luo JW (Luo Jun-Wei); Wang LW (Wang Lin-Wang)
收藏  |  浏览/下载:159/62  |  提交时间:2010/03/08
Spin Hall effect on the kagome lattice with Rashba spin-orbit interaction 期刊论文
physical review b, 2009, 卷号: 79, 期号: 3, 页码: art. no. 035323
Liu GC; Zhang P; Wang ZG; Li SSS
收藏  |  浏览/下载:170/23  |  提交时间:2010/03/08
Electronic structure and optical gain saturation of InAs1-xNx/GaAs quantum dots 会议论文
Chen J; Fan WJ; Xu Q; Zhang XW; Li SS; Xia JB
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/09
Effect of Ka-band microwave on the spin dynamics of electrons in a GaAs/Al0.35Ga0.65As heterostructure 期刊论文
applied physics letters, 2009, 卷号: 94, 期号: 19, 页码: art. no. 192107
作者:  Qian X
收藏  |  浏览/下载:80/7  |  提交时间:2010/03/08


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