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Influence of V/III ratio on the structural and photoluminescence properties of In0.52AlAs/In0.53GaAs metamorphic high electron mobility transistor grown by molecular beam epitaxy 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 3, 页码: 1119-1123
Gao, HL; Zeng, YP; Wang, BQ; Zhu, ZP; Wang, ZG
收藏  |  浏览/下载:54/6  |  提交时间:2010/03/08
Structural, electrical, and optical properties of InAsxSb1-x epitaxial films grown by liquid-phase epitaxy 期刊论文
journal of applied physics, 2008, 卷号: 104, 期号: 7, 页码: art. no. 073712
作者:  Wang Y;  Zhang XW;  Yin ZG
收藏  |  浏览/下载:45/0  |  提交时间:2010/03/08
Localized and free exciton spin relaxation dynamics in GaInNAs/GaAs quantum well 期刊论文
applied physics letters, 2008, 卷号: 92, 期号: 5, 页码: art. no. 051908
Lu SL; Bian LF; Uesugi M; Nosho H; Tackeuchi A; Niu ZC
收藏  |  浏览/下载:49/2  |  提交时间:2010/03/08
Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition 期刊论文
chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304
作者:  Liang S;  Pan JQ
收藏  |  浏览/下载:57/0  |  提交时间:2010/03/08
Growth Parameter Dependence of Structural Characterizations of Diluted Magnetic Semiconductor (Ga, Cr)As 期刊论文
ieee transactions on magnetics, 2008, 卷号: 44, 期号: 11, 页码: 2692-2695
作者:  Gan HD
收藏  |  浏览/下载:174/43  |  提交时间:2010/03/08


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