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浏览/检索结果: 共11条，第1-10条 帮助 限定条件 发表日期：2008    学科主题：半导体物理     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study 期刊论文 physical review b, 2008, 卷号: 77, 期号: 11, 页码: art. no. 113304 Li, JB; Wei, SH; Li, SS; Xia, JB 收藏  |  浏览/下载：55/6  |  提交时间：2010/03/08 ZNSE NANOCRYSTAL EMITTERS  CDSE NANOCRYSTALS  EFFICIENT  CHEMISTRY   Raman and infrared properties and layer dependence of the phonon dispersions in multilayered graphene 期刊论文 physical review b, 2008, 卷号: 77, 期号: 23, 页码: art. no. 235421 Jiang, JW; Tang, H; Wang, BS; Su, ZB 收藏  |  浏览/下载：73/11  |  提交时间：2010/03/08 LATTICE-DYNAMICS  GRAPHITE  FILMS   Enhanced electroluminescence intensity of InGaN/GaN multi-quantum-wells based on Mg-doped GaN annealed in O-2 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 10, 页码: art. no. 102112 Ma, P; Gai, YQ; Wang, JX; Yang, FH; Zeng, YP; Li, JM; Li, JB 收藏  |  浏览/下载：25/0  |  提交时间：2010/03/08 P-TYPE GAN  MOLECULAR-BEAM EPITAXY  AUGMENTED-WAVE METHOD  VAPOR-PHASE EPITAXY  ELECTRICAL-PROPERTIES  OXYGEN  ACTIVATION  SILICON   Interface as the origin of ferromagnetism in cobalt doped ZnO film grown on silicon substrate 期刊论文 applied physics letters, 2008, 卷号: 93, 期号: 14, 页码: art. no. 142109 作者:  Yin ZG;  Zhang XW 收藏  |  浏览/下载：23/0  |  提交时间：2010/03/08 MAGNETIC-PROPERTIES   Effect on nitrogen acceptor as Mg is alloyed into ZnO 期刊论文 applied physics letters, 2008, 卷号: 92, 期号: 6, 页码: art. no. 062110 Gai, YQ; Yao, B; Wei, ZP; Li, YF; Lu, YM; Shen, DZ; Zhang, JY; Zhao, DX; Fan, XW; Li, JB; Xia, JB 收藏  |  浏览/下载：61/0  |  提交时间：2010/03/08 P-TYPE ZNO  II-VI  BAND-GAP  SEMICONDUCTORS  FILMS  MGXZN1-XO  EPITAXY   Synthesis and characterization of ZnO nanoflowers grown on AIN films by solution deposition 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 2, 页码: 640-643 Gao, HY; Yan, FW; Zhang, Y; Li, JM; Zeng, YP 收藏  |  浏览/下载：51/4  |  提交时间：2010/03/08 CHEMICAL-VAPOR-DEPOSITION  NANORODS  MECHANISM  NANOWIRES   Fabrication and optical characterization of GaN-based nanopillar light emitting diodes 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 9, 页码: 3485-3488 Zhu, JH; Zhang, SM; Sun, X; Zhao, DG; Zhu, JJ; Liu, ZS; Jiang, DS; Duan, LH; Wang, H; Shi, YS; Liu, SY; Yang, H 收藏  |  浏览/下载：58/0  |  提交时间：2010/03/08 INDUCTIVELY-COUPLED PLASMA  ARRAYS  NANOSTRUCTURES  LUMINESCENCE  NANORODS   High-density and narrow size-distribution InAs quantum dots formed by a modified two-step growth 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 1, 页码: 323-327 She-Song, H; Zhi-Chuan, N; Feng, Z; Hai-Qiao, N; Huan, Z; Dong-Hai, W; Zheng, S 收藏  |  浏览/下载：42/3  |  提交时间：2010/03/08 molecular beam epitaxy  quantum dots  a modified two-step growth   Photoluminescence and lasing properties of InAs/GaAs quantum dots grown by metal-organic chemical vapour deposition 期刊论文 chinese physics b, 2008, 卷号: 17, 期号: 11, 页码: 4300-4304 作者:  Liang S;  Pan JQ 收藏  |  浏览/下载：57/0  |  提交时间：2010/03/08 metal-organic chemical vapour deposition   Effect of Interface Roughness and Dislocation Density on Electroluminescence Intensity of InGaN Multiple Quantum Wells 期刊论文 chinese physics letters, 2008, 卷号: 25, 期号: 11, 页码: 4143-4146 Zhao, DG; Jiang, DS; Zhu, JJ; Liu, ZS; Zhang, SM; Wang, YT; Yang, H 收藏  |  浏览/下载：15/0  |  提交时间：2010/03/08 X-RAY-DIFFRACTION  EPITAXIAL GAN  DEPENDENCE  PHOTOLUMINESCENCE  GROWTH  FILMS