Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study

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	Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study
	Li, JB ; Wei, SH ; Li, SS ; Xia, JB
刊名	physical review b
	2008
卷号	77 期号:11 页码:art. no. 113304
关键词	ZNSE NANOCRYSTAL EMITTERS CDSE NANOCRYSTALS EFFICIENT CHEMISTRY
ISSN号	1098-0121
通讯作者	li, jb, chinese acad sci, inst semicond, state key lab superlattices & microstruct, pob 912, beijing 100083, peoples r china. 电子邮箱地址: jbli@semi.ac.cn
中文摘要	doping difficulty in semiconductor nanocrystals has been observed and its origin is currently under debate. it is not clear whether this phenomenon is energetic or depends on the growth kinetics. using first-principles method, we show that the transition energies and defect formation energies of the donor and acceptor defects always increase as the quantum dot sizes decrease. however, for isovalent impurities, the changes of the defect formation energies are rather small. the origin of the calculated trends is explained using simple band-energy-level models.
学科主题	半导体物理
收录类别	SCI
语种	英语
公开日期	2010-03-08
内容类型	期刊论文
源URL	[http://ir.semi.ac.cn/handle/172111/6760]
专题	半导体研究所_中国科学院半导体研究所（2009年前）
推荐引用方式 GB/T 7714	Li, JB,Wei, SH,Li, SS,et al. Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study[J]. physical review b,2008,77(11):art. no. 113304.
APA	Li, JB,Wei, SH,Li, SS,&Xia, JB.(2008).Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study.physical review b,77(11),art. no. 113304.
MLA	Li, JB,et al."Origin of the doping bottleneck in semiconductor quantum dots: A first-principles study".physical review b 77.11(2008):art. no. 113304.