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| Electrical properties of undoped In0.53Ga0.47As grown on InP substrates by molecular beam epitaxy 期刊论文
journal of crystal growth, 2006, 卷号: 293, 期号: 2, 页码: 291-293
Cui LJ (Cui L. J.); Zeng YP (Zeng Y. P.); Wang BQ (Wang B. Q.); Zhu ZP (Zhu Z. P.)
  收藏 | 浏览/下载：20/0 | 提交时间：2010/04/11
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| Electrical properties of B-doped polycrystalline silicon thin films prepared by rapid thermal chemical vapour deposition 期刊论文
thin solid films, 2006, 卷号: 497, 期号: 1-2, 页码: 157-162
Ai B; Shen H; Liang ZC; Chen Z; Kong GL; Liao XB
收藏 | 浏览/下载：48/0 | 提交时间：2010/04/11
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| Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD 期刊论文
microelectronics journal, 2006, 卷号: 37, 期号: 7, 页码: 583-585
Ran JX; Wang XL; Hu GX; Wang JX; Li JP; Wang CM; Zeng YP; Li JM
收藏 | 浏览/下载：53/0 | 提交时间：2010/04/11
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| MBE InAs quantum dots grown on metamorphic InGaAs for long wavelength emitting 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 35, 期号: 1, 页码: 194-198
Jiao YH (Jiao Y. H.); Wu J (Wu J.); Xu B (Xu B.); Jin P (Jin P.); Hu LJ (Hu L. J.); Liang LY (Liang L. Y.); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：35/0 | 提交时间：2010/04/11
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| Selective growth of InAs islands on patterned GaAs (100) substrate 期刊论文
superlattices and microstructures, 2006, 卷号: 39, 期号: 5, 页码: 446-453
作者: Xu B ; Jin P
收藏 | 浏览/下载：92/0 | 提交时间：2010/04/11
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| Monte Carlo simulation of the modulated effect induced by the dislocation to the quantum dot growth 期刊论文
materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 31-35
Zhao C (Zhao C.); Chen YH (Chen Y. H.); Zhao M (Zhao Man); Zhang CL (Zhang C. L.); Xu B (Xu B.); Yu LK (Yu L. K.); Sun J (Sun J.); Lei W (Lei W.); Wang ZG (Wang Z. G.)
收藏 | 浏览/下载：31/0 | 提交时间：2010/04/11
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| Growth and characterization of semi-insulating GaN films grown by MOCVD 期刊论文
journal of rare earths, 2006, 卷号: 24, 期号: sp.iss.si, 页码: 14-18
Fang CB; Wang XL; Hu GX; Wang JX; Wang CM; Li JM
收藏 | 浏览/下载：49/0 | 提交时间：2010/04/11
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| Study of nucleation positions of InAs islands on stripe-patterned GaAs(100) substrate 期刊论文
physica e-low-dimensional systems & nanostructures, 2006, 卷号: 31, 期号: 1, 页码: 43-47
作者: Jin P; Xu B
收藏 | 浏览/下载：79/0 | 提交时间：2010/04/11
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| 1.55-mu m resonant cavity enhanced photodiode based on MBE grown Ge quantum dots 期刊论文
thin solid films, 2006, 卷号: 508, 期号: 1-2, 页码: 396-398
Yu J; Kasper E; Oehme M
收藏 | 浏览/下载：63/0 | 提交时间：2010/04/11
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| The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures 期刊论文
journal of crystal growth, 2006, 卷号: 289, 期号: 2, 页码: 415-418
Wang CM; Wang XL; Hu GX; Wang JX; Xiao HL; Li JP
收藏 | 浏览/下载：44/0 | 提交时间：2010/04/11
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