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科研机构
半导体研究所 [6]
内容类型
期刊论文 [4]
会议论文 [2]
发表日期
2006 [6]
学科主题
半导体材料 [6]
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发表日期:2006
学科主题:半导体材料
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Correlation between optical and electrical properties in In0.52Al0.48As/InxGa1-xAs metamorphic high-electron-mobility-transistor structures on GaAs substrates
期刊论文
journal of applied physics, 2006, 卷号: 100, 期号: 3, 页码: art.no.033705
Cui LJ (Cui L. J.)
;
Zeng YP (Zeng Y. P.)
;
Wang BQ (Wang B. Q.)
;
Zhu ZP (Zhu Z. P.)
;
Guo SL (Guo S. L.)
;
Chu JH (Chu J. H.)
收藏
  |  
浏览/下载:28/0
  |  
提交时间:2010/04/11
QUANTUM-WELL STRUCTURES
PHOTOLUMINESCENCE SPECTRA
HEMTS
The effect of Be-doping structure in negative electron affinity GaAs photocathodes on integrated photosensitivity
期刊论文
applied surface science, 2006, 卷号: 252, 期号: 12, 页码: 4104-4109
Wang XF
;
Zeng YP
;
Wang BQ
;
Zhu ZP
;
Du XQ
;
Li M
;
Chang BK
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  |  
浏览/下载:43/0
  |  
提交时间:2010/04/11
structure
NEA
integrated photosensitivity
GaAs
Cs : O
SPECTRAL RESPONSE
NEA PHOTOCATHODES
LAYER THICKNESS
CS
SURFACE
PHOTOEMISSION
SYSTEM
Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering
期刊论文
journal of crystal growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60
作者:
Yin ZG
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  |  
浏览/下载:54/0
  |  
提交时间:2010/04/11
crystal structure
thermal annealing
X-ray diffraction
RF magnetron sputtering
zinc oxide
semiconducting II-VI materials
P-TYPE ZNO
SPRAY-PYROLYSIS
ZINC-OXIDE
The difference of Si doping efficiency in GaN and AlGaN in GaN-based HBT structure
会议论文
32nd international symposium on compound semiconductors, rust, germany, sep 18-22, 2005
Ran, JX
;
Wang, XL
;
Hu, GX
;
Li, JP
;
Wang, JX
;
Wang, CM
;
Zeng, YP
;
Li, JM
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  |  
浏览/下载:167/71
  |  
提交时间:2010/03/29
ALN
IMPURITIES
DONOR
Homoepitaxial growth and characterization of 4H-SiC epilayers by low-pressure hot-wall chemical vapor deposition
会议论文
international conference on silicon carbide and related materials (icscrm 2005), pittsburgh, pa, sep 18-23, 2005
Sun, GS (Sun, Guosheng)
;
Ning, J (Ning, Jin)
;
Gong, QC (Gong, Quancheng)
;
Gao, X (Gao, Xin)
;
Wang, L (Wang, Lei)
;
Liu, XF (Liu, Xingfang)
;
Zeng, YP (Zeng, Yiping)
;
Li, JM (Li, Jinmin)
收藏
  |  
浏览/下载:100/29
  |  
提交时间:2010/03/29
homoepitaxial growth
low-pressure hot-wall CVD
structural and optical characteristics
intentional doping
Schottky barrier diodes
Self-consistent analysis of double-delta-doped InAlAs/InGaAs/InP HEMTs
期刊论文
chinese physics, 2006, 卷号: 15, 期号: 11, 页码: 2735-2741
Li DL (Li Dong-Lin)
;
Zeng YP (Zeng Yi-Ping)
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  |  
浏览/下载:29/0
  |  
提交时间:2010/04/11
two-dimensional electron gas
high electron mobility transistor
self-consistent calculation
InAlAs/InGaAs heterostructure
CHARGE CONTROL MODEL
ELECTRON-MOBILITY TRANSISTORS
PSEUDOMORPHIC INGAAS HEMT
FIELD-EFFECT TRANSISTOR
QUANTUM-WELL
ALGAAS/INGAAS PHEMTS
GATE RECESS
HIGH-SPEED
HETEROJUNCTION
CHANNEL
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