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浏览/检索结果: 共8条，第1-8条 帮助 限定条件 发表日期：2006    学科主题：半导体材料    专题：半导体研究所    第一署名单位    第一作者单位    通讯作者单位     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 Fabrication and properties of Sb-doped ZnO thin films grown by radio frequency (RF) magnetron sputtering 期刊论文 journal of crystal growth, 2006, 卷号: 290, 期号: 1, 页码: 56-60 作者:  Yin ZG 收藏  |  浏览/下载：55/0  |  提交时间：2010/04/11 crystal structure  thermal annealing  X-ray diffraction  RF magnetron sputtering  zinc oxide  semiconducting II-VI materials  P-TYPE ZNO  SPRAY-PYROLYSIS  ZINC-OXIDE   ZnO thin films on Si(111) grown by pulsed laser deposition from metallic Zn target 期刊论文 applied surface science, 2006, 卷号: 253, 期号: 2, 页码: 841-845 Zhao J (Zhao Jie); Hu LZ (Hu Lizhong); Wang ZY (Wang Zhaoyang); Sun J (Sun Jie); Wang ZJ (Wang Zhijun) 收藏  |  浏览/下载：25/0  |  提交时间：2010/04/11 ZnO  pulsed laser deposition  oxygen pressure  annealing  X-ray diffraction  photoluminescence  ULTRAVIOLET EMISSION  ROOM-TEMPERATURE  ZINC-OXIDE   Crack control in GaN grown on silicon (111) using In doped low-temperature AlGaN interlayer by metalorganic chemical vapor deposition 期刊论文 optical materials, 2006, 卷号: 28, 期号: 10, 页码: 1227-1231 Wu JJ (Wu Jiejun); Han XX (Han Xiuxun); Li JM (Li Jiemin); Wei HY (Wei Hongyuan); Cong GW (Cong Guangwei); Liu XL (Liu Xianglin); Zhu QS (Zhu Qinsheng); Wang ZG (Wang Zhanguo); Jia QJ (Jia Quanjie); Guo LP (Guo Liping); Hu TD (Hu Tiandou); Wang HH (Wang Huanhua) 收藏  |  浏览/下载：49/0  |  提交时间：2010/04/11 in doping  cracks  Si(111) substrate  LT-AlGaN interlayer  metalorganic chemical vapor deposition  GaN  PHASE EPITAXY  INDIUM-SURFACTANT  OPTICAL-PROPERTIES  SI(111)  STRESS  FILMS   Photoluminescence from C+ ion-implanted and electrochemical etched Si layers 期刊论文 applied surface science, 2006, 卷号: 252, 期号: 24, 页码: 8424-8427 Shi LW (Shi Liwei); Wang Q (Wang Qiang); Li YG (Li Yuguo); Xue CS (Xue Chengshan); Zhuang HZ (Zhuang Huizhao) 收藏  |  浏览/下载：34/0  |  提交时间：2010/04/11 ion implantation  annealing  chemical etching  photoluminescence  POROUS SILICON  LUMINESCENCE   Optical and structural properties of ZnO films grown on Si(100) substrates by MOCVD - art. no. 60290G 会议论文 20th congress of the international-commission-for-optics, changchun, peoples r china, aug 21-26, 2005 Shen, WJ; Duan, Y; Wang, J; Wang, QY; Zeng, YP 收藏  |  浏览/下载：95/18  |  提交时间：2010/03/29 ZnO  MOCVD  thermal annealing  photoluminescence  x-ray diffraction  atomic force microscopy  PULSED-LASER DEPOSITION  THIN-FILMS  PHOTOLUMINESCENCE  MECHANISMS  EPITAXY  CVD  SI   Nanoelectronic devices-resonant tunnelling diodes grown on InP substrates by molecular beam epitaxy with peak to valley current ratio of 17 at room temperature 期刊论文 chinese physics, 2006, 卷号: 15, 期号: 6, 页码: 1335-1338 作者:  Zhang Y 收藏  |  浏览/下载：48/0  |  提交时间：2010/04/11 resonant tunnelling diode  InP substrate  molecular beam epitaxy  high resolution transmission electron microscope  CURRENT-VOLTAGE CHARACTERISTICS  INTRINSIC BISTABILITY  CIRCUIT   Electron irradiation-induced defects in InP pre-annealed at high temperature 期刊论文 materials science in semiconductor processing, 2006, 卷号: 9, 期号: 1-3, 页码: 380-383 Zhao YW (Zhao Y. W.); Dong ZY (Dong Z. Y.); Deng AH (Deng A. H.) 收藏  |  浏览/下载：44/0  |  提交时间：2010/04/11 indium phosphide  defect  irradiation  THERMALLY STIMULATED CURRENT  UNDOPED SEMIINSULATING INP  DEEP-LEVEL DEFECTS  FRENKEL PAIRS  FE  SPECTROSCOPY  PHOSPHIDE  AMBIENT  TRAPS   Kinetic Monte Carlo simulation of spatially ordered growth of quantum dots on patterned substrate 期刊论文 solid state communications, 2006, 卷号: 137, 期号: 11, 页码: 630-633 作者:  Xu B 收藏  |  浏览/下载：52/0  |  提交时间：2010/04/11 quantum dot  molecular beam epitaxy  kinetic effects  Monte Carlo simulation  MOLECULAR-BEAM EPITAXY  PERIODIC STRAIN  NUCLEATION