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Theoretical investigation of intersubband transition in AlxGa1-xN/GaN/AlyGa1-yN step quantum well 期刊论文
physica e-low-dimensional systems & nanostructures, 2005, 卷号: 28, 期号: 4, 页码: 453-461
Li, JM; Lu, YW; Han, XX; Wu, JJ; Liu, XL; Zhu, QS; Wang, ZG
收藏  |  浏览/下载:200/76  |  提交时间:2010/03/17
Crack-free GaN/Si(111) epitaxial layers grown with InAlGaN alloy as compliant interlayer by metalorganic chemical vapor deposition 期刊论文
journal of crystal growth, 2005, 卷号: 279, 期号: 3-4, 页码: 335-340
作者:  Li DB;  Wei HY;  Han XX
收藏  |  浏览/下载:62/22  |  提交时间:2010/03/17
cracks  


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