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浏览/检索结果: 共4条，第1-4条 帮助 限定条件 发表日期：2003    学科主题：半导体材料    内容类型：会议论文     已选(0)清除 条数/页：5101520253035404550556065707580859095100   排序方式：请选择作者升序作者降序题名升序题名降序发表日期升序发表日期降序提交时间升序提交时间降序 High-mobility Ga-polarity GaN achieved by NH3-MBE 会议论文 symposium on gan and related alloys held at the 2002 mrs fall meeting, boston, ma, dec 02-06, 2002 Wang JX; Wang XL; Sun DZ; Li JM; Zeng YP; Hu GX; Liu HX; Lin LY 收藏  |  浏览/下载：31/0  |  提交时间：2010/10/29 MOLECULAR-BEAM EPITAXY  ION-SCATTERING SPECTROSCOPY  LATTICE POLARITY  SINGLE-CRYSTALS  FILMS  POLARIZATION  GAN(0001)  SURFACES  GROWTH  DIODES   Growth and photoluminescence of InAlGaN films 会议论文 5th international conference on nitride semiconductors (icns-5), nara, japan, may 25-30, 2003 作者:  Li DB 收藏  |  浏览/下载：13/2  |  提交时间：2010/10/29 MULTIPLE-QUANTUM WELLS  QUATERNARY ALLOYS  OPTICAL-PROPERTIES   Microstructure of the silicon film prepared near the phase transition regime from amorphous to nanocrystalline 会议论文 symposium on quantum confined semiconductor nanostructures held at the 2002 mrs fall meeting, boston, ma, dec 02, 2001-dec 05, 2002 Zhang SB; Liao XB; Xu YY; Hu ZH; Zeng XB; Diao HW; Luo MC; Kong G 收藏  |  浏览/下载：18/0  |  提交时间：2010/10/29 POLYMORPHOUS SILICON  LIGHT-SCATTERING  THIN-FILMS  SI  MICROCRYSTALLINITY  ABSORPTION  STATES   Hydrogen related defects in neutron-irradiated silicon grown in hydrogen ambient 会议论文 iumrs/icem 2002 conference, xian, peoples r china, jun 10-14, 2002 Wang QY; Wang JH; Deng HF; Lin LY 收藏  |  浏览/下载：17/0  |  提交时间：2010/11/15 neutron irradiation  annealing  defects in silicon  SPECTRA